Related papers: Optical spin pumping in silicon
We study the evolution and distribution of non-equilibrium electron spin polarization in n-type semiconductors within the two-component drift-diffusion model in an applied electric field. Propagation of spin-polarized electrons through a…
The optical injection of charge and spin currents are investigated in Ge$_{1-x}$Sn$_{x}$ semiconductors as a function of Sn content. These emerging silicon-compatible materials enable the modulation of these processes across the entire…
We describe a new means for electrically creating spin polarization in semiconductors. In contrast to spin injection of electrons by tunneling through a reverse-biased Schottky barrier, we observe spin accumulation at the…
We show how to achieve optical, spin-selective transitions from the ground state to excited orbital states of group-V donors (P, As, Sb, Bi) in silicon. We consider two approaches based on either resonant, far-infrared (IR) transitions of…
There has been much recent research into polarizing an antiproton beam, instigated by the recent proposal from the PAX (Polarized Antiproton eXperiment) project at GSI Darmstadt. It plans to polarize an antiproton beam by repeated…
Theoretical description of electron spin orientation and detection by short optical pulses is proposed for the ensembles of the singly charged semiconductor nanocrystals. The complex structure of the valence band in spherical nanocrystals…
Controlling the polarization state of light with sub-picosecond speed and subwavelength precision remains a key challenge for next-generation nanophotonic devices. Conventional methods such as birefringent crystals, liquid crystals, or…
In spin-polarized bipolar transport both electrons and holes in doped semiconductors contribute to spin-charge coupling. The current conversion between the minority (as referred to carriers and not spin) and majority carriers leads to novel…
Studies of spin manipulation in semiconductors has benefited from the possibility to grow these materials in high quality on top of optically active III-V systems. The induced electroluminescence in these layered semiconductor…
We formulate an analytical model for vertical-cavity surface-emitting lasers (VCSELs) with injection (pump) of spin-polarized electrons. Our results for two different modes of carrier recombination allow for a systematic analysis of the…
Adding spin-polarized carriers to semiconductor lasers strongly changes their properties and, through the transfer of angular momentum, leads to the emission of circularly polarized light. In such spin-lasers, the polarization of the…
We formulate a model of a semiconductor Quantum Dot laser with injection of spin-polarized electrons. As compared to higher-dimensionality structures, the Quantum-Dot-based active region is known to improve laser properties, including the…
We provide an analytic study of the dynamics of semiconductor lasers with injection (pump) of spin-polarized electrons, previously considered in the steady-state regime. Using complementary approaches of quasi-static and small signal…
Using only linearly polarized light, we study the possibility of generating spin-polarized photoelectrons from xenon atoms. No net spin polarization is possible, since the xenon ground state is spin-less, but when the photoelectron are…
The use of the spin Hall effect and its inverse to electrically detect and manipulate dynamic spin currents generated via ferromagnetic resonance (FMR) driven spin pumping has enabled the investigation of these dynamically injected currents…
Topological insulators are characterized by Dirac cone surface states with electron spins aligned in the surface plane and perpendicular to their momenta. Recent theoretical and experimental work implied that this specific spin texture…
We report on laser spectroscopic measurements on Li$^+$ ions in the experimental storage ring ESR at the GSI Helmholtz Centre for Heavy Ion Research. Driving the $2s\,^3\!{S}_1\;(F=\frac{3}{2})…
We demonstrate spin polarized tunneling from Fe through a SiO2 tunnel barrier into a Si n-i-p heterostructure. Transport measurements indicate that single step tunneling is the dominant transport mechanism. The circular polarization, Pcirc,…
Erbium doped solids are potential candidates for the realization of a quantum memory for photons at telecommunication wavelengths. The implementation of quantum memory proposals in rare earth ion doped solids require spectral tailoring of…
We report on time-resolved ultrafast optical spectroscopy study of the topological insulator (TI) Bi$_2$Se$_3$. We unravel that a net spin polarization can not only be generated using circularly polarized light via interband transitions…