Analytical Model of Spin-Polarized Semiconductor Lasers
Other Condensed Matter
2009-11-13 v1
Abstract
We formulate an analytical model for vertical-cavity surface-emitting lasers (VCSELs) with injection (pump) of spin-polarized electrons. Our results for two different modes of carrier recombination allow for a systematic analysis of the operational regimes of the spin-VCSELs. We demonstrate that threshold reduction by electrically-pumped spin-polarized carriers can be larger than previously assumed possible. Near the threshold, such VCSELs can act as effective non-linear filters of circularly-polarized light, owing to their spin-dependent gain.
Cite
@article{arxiv.0806.4209,
title = {Analytical Model of Spin-Polarized Semiconductor Lasers},
author = {Christian Gothgen and Rafal Oszwaldowski and Athos Petrou and Igor Zutic},
journal= {arXiv preprint arXiv:0806.4209},
year = {2009}
}
Comments
4 pages, 3 figures