Related papers: Frequency as a Clock: Synchronization and Intrinsi…
We discuss the origin of an additional dip other than the charge neutrality point observed in transfer characteristics of graphene-based field-effect transistors. The double-dip is proved to arise from charge transfer between graphene and…
Electrostatic confinement in semiconductors provides a flexible platform for the emulation of interacting electrons in a two-dimensional lattice, including in the presence of gauge fields. This combination offers the potential to realize a…
In order to elucidate the relationship between rate-independent hysteresis and metastability in disordered systems driven by an external field, we study the Gaussian RFIM at T=0 on regular random graphs (Bethe lattice) of finite…
We study the flow dynamics inside a high-speed rotating cylinder after introducing strong symmetry-breaking disturbance factors at cylinder wall motion. We propose and formulate a mathematically robust stochastic model for the rotational…
This work aims to propose and design a class of networks of coupled linear and nonlinear oscillators, in which short bursts of exogenous excitation result in sustained endogenous network activity that returns to a quiescent state only after…
The MOS devices are the basic building block of any digital and analog circuits, where silicon (Si) is the most commonly used material. The International Technology Roadmap Semiconductor (ITRS) report predicts the gate length of the MOS…
Spin dependent electron transport measurements on graphene are of high importance to explore possible spintronic applications. Up to date all spin transport experiments on graphene were done in a semi-classical regime, disregarding quantum…
We present a general formalism for the construction of thermodynamically consistent stochastic models of non-linear electronic circuits. The devices constituting the circuit can have arbitrary I-V curves and may include tunnel junctions,…
Radio-frequency compressed ultrafast electron diffraction has been used to probe the coherent and incoherent coupling of impulsive electronic excitation at 1.55 eV (800 nm) to optical and acoustic phonon modes directly from the perspective…
In mechanical systems, Maxwell-Betti reciprocity means that the displacement at point B in response to a force at point A is the same as the displacement at point A in response to the same force applied at point B. Because the notion of…
A distinctive feature of single layer graphene is the linearly dispersive energy bands, which in case of multilayer graphene become parabolic. Other than the quantum Hall effect, this distinction has been hard to capture in electron…
A number of memristive devices, mainly ReRAMs, have been reported to exhibit a unique non-zero crossing hysteresis attributed to the interplay of resistive and not yet fully understood `capacitive', and `inductive' effects. This work…
We present a graphene-based phase shifter for radio-frequency (RF) phase-array applications. The core of the designed phase-shifting system consists of a graphene field-effect transistor (GFET) used in a common source amplifier…
We present a numerical study of the zero-temperature response of the Gaussian random-field Ising model (RFIM) to a slowly varying external field, allowing the system to be trapped in microscopic configurations that are not fully metastable.…
We have reported on the hysteresis and training effect of spin current in Pt/Y3Fe5O12 heterostructures during subsequent cycles of ionic liquid gate voltage Vg. The inverse spin Hall effect voltage in spin pumping and spin Hall…
Understanding the impact of grid-following (GFL) converters on system frequency dynamics is crucial, from both the center of inertia (COI) and frequency spatial variation perspectives. Part I of this series clarifies the mechanisms by which…
We observe very small gate-voltage shifts in the transfer characteristic of as-prepared graphene field-effect transistors (GFETs) when the pH of the buffer is changed. This observation is in strong contrast to Si-based ion-sensitive FETs.…
Low-frequency noise (LFN) variability in graphene transistors (GFETs) is for the first time researched in this work. LFN from an adequate statistical sample of long-channel solution-gated single-layer GFETs is measured in a wide range of…
We introduce a scheme to coherently suppress second-rank tensor frequency shifts in atomic clocks, relying on the continuous rotation of an external magnetic field during the free atomic state evolution in a Ramsey sequence. The method…
An electrodynamic response of graphene to a strong electromagnetic radiation is considered. A hot electron model (HEM) is introduced and a corresponding system of nonlinear equations is formulated. Solutions of this system are found and…