Related papers: Orbital Hall Effect Enables Field-Free Magnetizati…
Recent experiments reported an antisymmetric planar Hall effect, where the Hall current is odd in the in-plane magnetic field and scales linearly with both electric and magnetic fields applied. Existing theories rely exclusively on a spin…
We theoretically study the spin Hall effect in a simple tight-binding model of stacked-kagome Weyl semimetal Co3Sn2S2 with ferromagnetic ordering. We focus on the two types of the spin Hall current: one flowing in the in-plane direction…
Electrical manipulation of magnetization is essential for integration of magnetic functionalities such as magnetic memories and magnetic logic devices into electronic circuits. The current induced spin-orbit torque (SOT) in heavy…
Efficient and versatile spin-to-charge current conversion is crucial for the development of spintronic applications, which strongly rely on the ability to electrically generate and detect spin currents. In this context, the spin Hall effect…
The orbital Hall effect (OHE) is attracting recent interest due to its fundamental science implications and potential applications in orbitronics and spintronics. Unlike the spin Hall effect, the connection between the OHE and band topology…
The Orbital Hall effect, which originates from materials with weak spin-orbit coupling, has attracted considerable interest for spin-orbitronic applications. Here, we demonstrate the inverse effect of the orbital Hall effect and observe…
In spin torque magnetic memories, electrically actuated spin currents are used to switch a magnetic bit. Typically, these require a multilayer geometry including both a free ferromagnetic layer and a second layer providing spin injection.…
We proposed a novel and simple multilayer structure to realize the deterministic switching of perpendicularly magnetized layers (Co in our work) by spin orbital torque from the spin Hall Effect in this paper. A pinned layer is introduced,…
Spin Hall effect and its inverse provide essential means to convert charge to spin currents and vice versa, which serve as a primary function for spintronic phenomena such as the spin-torque ferromagnetic resonance and the spin Seebeck…
Magnetization switching in a fine-structured ferromagnet of nanoscale by the spin-transfer torque excited via the spin Hall effect has attracted much attention because it enables us to manipulate the magnetization without directly applying…
Realizing deterministic current-induced spin-orbit torque (SOT) magnetization switching, especially in systems exhibiting perpendicular magnetic anisotropy (PMA), typically requires the application of a collinear in-plane field, posing a…
We present a new ferromagnetic resonance (FMR) method that we term the Ferris FMR. It is wideband, has significantly higher sensitivity as compared to conventional FMR systems, and measures the absorption line rather than its derivative. It…
Large charge-to-spin conversion (spin Hall angle) and spin Hall conductivity are prerequisites for development of next generation power efficient spintronic devices. In this context, heavy metals (e.g. Pt, W etc.), topological insulators,…
Electrical readout of 180$^\circ$ switching in strictly compensated collinear antiferromagnets remains a major challenge in antiferromagnetic spintronics. Electrical writing of perpendicularly magnetized ferromagnets by out-of-plane orbital…
Giant spin Hall effect (GSHE) has been observed in heavy metal materials such as Ta, Pt, and W, where spins are polarized in the surface plane and perpendicular to the charge current direction. Spins generated in these materials have…
Recent progress in orbitronics reveals the possibility of using orbit current as an information carrier. The interconversion between orbit currents and charge currents is crucial for orbit information processing. Although orbit currents can…
High density data storage and spin-logic devices require highly efficient all-electric control of spin moments. So far, charge-to-spin conversion through the spin Hall effect (SHE) highly limits to d-orbital materials associated with strong…
We show that H-phase transition metal dichalcogenides (TMDs) monolayers such as MoS$_2$ and WSe$_2$, are orbital Hall insulators. They present very large orbital Hall conductivity plateaus in their semiconducting gap, where the spin Hall…
It has become a heated debate as to whether the orbital Hall effect of a material could generate a non-local orbital current and a non-zero spin-orbit torque on an adjacent magnetic layer. Here, we report unambiguous evidence that,…
The integration of two-dimensional (2D) van der Waals (vdW) magnets with topological insulators or heavy metals holds great potential for realizing next-generation spintronic memory devices. However, achieving high-efficiency SOT switching…