Related papers: Orbital Hall Effect Enables Field-Free Magnetizati…
Spin Hall effect, one of the cornerstones in spintronics refers to the emergence of an imbalance in the spin density transverse to a charge flow in a sample under voltage bias. This study points to a novel way for an ultrafast generation…
Evaluations of the orbital Hall effect (OHE) have only retained inter-band matrix elements of the position operator. Here we evaluate the OHE including all matrix elements of the position operator, including the technically challenging…
It is generally believed that spin-orbit coupling (SOC) follows Z4 (atomic number) dependence and becomes significant only in heavy elements. Consequently, SOC in 3d transition metals should be negligible given their small Z. Using dynamic…
THz generation from femtosecond photoexcited spintronic heterostructures has recently become a versatile tool for investigating ultrafast spin-transport and transient charge-current in a non-contact and non-invasive manner. The same from…
Spin-orbit interaction (SOI) couples charge and spin transport, enabling electrical control of magnetization. A quintessential example of SOI-induced transport is the anomalous Hall effect (AHE), first observed in 1880, in which an electric…
A recent paper [Go $\textit{et al}$., Phys. Rev. Lett. $\textbf{121}$, 086602 (2018)] proposed that the intrinsic orbital Hall effect (OHE) can emerge from momentum-space orbital texture in centrosymmetric materials. In searching for real…
Spin-orbit torque (SOT) can be used to efficiently manipulate the magnetic state of magnetic materials, which is an essential element for memory and logic applications. Due to symmetry constraints, only in-plane spins can be injected into…
An important goal of spintronics is to covert a charge current into a spin current with a controlled spin polarization that can exert torques on an adjacent magnetic layer. Here we demonstrate such torques in a two ferromagnet system. A…
Application of sufficient lateral current to a heavy metal (HM) can switch the perpendicular magnetization orientation of adjacent ferromagnetic layer (FM) through spin-orbit torques (SOTs). The choice of the HM and its arrangement plays a…
We demonstrate robust and reversible electric-current control of the anomalous Hall effect (AHE) in a two-dimensional WTe2/Fe3GeTe2 (FGT) stack. Applying a current through Td-WTe2 leads to a giant modulation of the AHE of the adjacent FGT…
In metallic systems with spin-orbit coupling a longitudinal charge current may generate a transverse pure spin current; vice-versa an injected pure spin current may result in a transverse charge current. Such direct and inverse spin Hall…
Electric field control of the magnetic state in ferrimagnets holds great promise for developing spintronic devices due to low power consumption. Here, we demonstrate a non-volatile reversal of perpendicular net magnetization in a…
The nonlinear Hall effect is a new type of Hall effect that has recently attracted significant attention. For the physical origin of the nonlinear Hall effect, while orbital magnetization has long been hypothesized to underpin the nonlinear…
In this work, we study magnetization switching induced by spin-orbit torque in W(Pt)/Co/NiO heterostructures with variable thickness of heavy-metal layers W and Pt, perpendicularly magnetized Co layer and an antiferromagnetic NiO layer.…
The Hall effect, the anomalous Hall effect and the spin Hall effect are fundamental transport processes in solids arising from the Lorentz force and the spin-orbit coupling respectively. The quantum versions of the Hall effect and the spin…
We demonstrate that the Magnus force acting on magnetic skyrmions can be efficiently tuned via modulation of the spin-orbit interaction strength. We show that the skyrmion Hall effect, which is a direct consequence of the non-vanishing…
Numerical calculations indicate that by suitably controlling the individual gate voltages of a capacitively coupled parallel double quantum dot, with each quantum dot coupled to one of two independent non-magnetic channels, this system can…
The photonic Spin Hall Effect (SHE) causes a polarization-dependent transverse shift of light at an interface. There is a significant research interest in controlling and enhancing the photonic SHE. In this paper, we theoretically…
Spin-orbit torque (SOT) enables ultra-fast, energy-efficient magnetization switching, making it a promising mechanism for introducing MRAMs for cache memory applications. However, current SOT-MRAM devices face write efficiency limitations,…
While tremendous work has gone into spin-orbit torque and spin current generation, charge-to-spin conversion efficiency remains weak in silicon to date, generally stemming from the low spin-orbit coupling (low atomic number, Z) and lack of…