Related papers: High-linearity power amplifier based on GaAs HBT
We report a polarization-induced 2D electron gas (2DEG) at an epitaxial AlBN/GaN heterojunction grown on a SiC substrate. Using this 2DEG in a long conducting channel, we realize ultra-thin barrier AlBN/GaN high electron mobility…
This research was to design a 2.4 GHz class E Power Amplifier (PA) for health care, with 0.18um Semiconductor Manufacturing International Corporation CMOS technology by using Cadence software. And also RF switch was designed at cadence…
In this work, we demonstrate a passivation-free Ga-polar recessed-gate AlGaN/GaN HEMT on a sapphire substrate for W-band operation, featuring a 5.5 nm Al0.35Ga0.65N barrier under the gate and a 31 nm Al0.35Ga0.65N barrier in the gate access…
We present a high power single-frequency ytterbium fiber amplifier system with an output power of 30 W at 1091 nm. The amplifier system consists of two stages, a preamplifier stage in which amplified spontaneous emission is efficiently…
The Wireless Allowing Data and Power Transmission (WADAPT) proposal was formed to study the feasibility of wireless technologies in HEP experiments. A strong motivation for using wireless data transmission at the ATLAS detector is the…
Noise level frequently set the basic limit on the smallest signal. New noise reduction technology and amplifiers voltage-noise density, yet still offer high speed, high accuracy, and low power solution. Low noise amplifiers always play a…
We present broadband parametric amplifiers based on the kinetic inductance of superconducting NbTiN thin films in an artificial (lumped-element) transmission line architecture. We demonstrate two amplifier designs implementing different…
We report on the design and demonstration of ultra-wide bandgap (UWBG) AlGaN-channel metal-insulator heterostructure field effect transistors (HEFTs) for high-power, high-frequency applications. We find that the integration of gate…
This paper introduces a robust Pareto design approach for transistor sizing of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs), particularly for power amplifier (PA) and low-noise amplifier (LNA) designs in 5G applications.…
Here we report the development of high-efficiency microscale GaAs laser power converters, and their successful transfer printing onto silicon substrates, presenting a unique, high power, low-cost and integrated power supply solution for…
We demonstrate a free-space amplitude modulator for mid-infrared radiation (lambda=9.6 um) that operates at room temperature up to at least 20 GHz (above the -3dB cutoff frequency measured at 8.2 GHz). The device relies on the ultra-fast…
One of the major challenges in communication, radar, and electronic warfare receivers arises from nearby device interference. The paper presents a 2-6 GHz GaN LNA front-end with onboard sensing, processing, and feedback utilizing…
We design and demonstrate selective injection GaN heterojunction bipolar transistors that utilize a patterned base for selective injection of electrons from the emitter. The design maneuvers minority carrier injection through a thin p-GaN…
The accelerator for the APT Project is a 100 mA CW proton linac with an output energy of 1030 MeV. A High Energy Beam Transport (HEBT) conveys the beam to a raster expander, that provides a large rectangular distribution at a target/blanket…
Waveform optimization has shown its great potential to boost the performance of far-field wireless power transfer (WPT). Current research has optimized transmit waveform, adaptive to channel state information (CSI), to maximize the…
This paper presents the first-ever highly linear and load-insensitive three-way load-modulation power amplifier (PA) based on reconfigurable hybrid asymmetrical load modulated balanced amplifier (H-ALMBA). Through proper amplitude and phase…
In this paper, the impact of imperfect beam alignment (IBA) on millimeter wave (mmWave) wireless power transfer (WPT) is investigated. We consider a mmWave WPT network, where the location of the energy transmitters follows a Poisson point…
This letter proposes a high-efficiency dual-band class-F rectifier for wireless power transmission (WPT). The rectifier comprises a dual-band harmonic termination network, a dual-band matching network, a single Schottky diode, and a dc pass…
We study the information-energy capacity region (IE-CR) of an additive white Gaussian noise (AWGN) channel in the presence of high-power amplifier (HPA) nonlinearity. Specifically, we consider a three-node network consisting of one…
Antennas operating at the high-frequency (HF) band (3-30 MHz) are frequently electrically small due to the large wavelength of electromagnetic waves (10-100 m). However, the bandwidth-efficiency products of passively matched electrically…