Related papers: High-linearity power amplifier based on GaAs HBT
Nanometer scale power amplifiers (PA) at sub-THz suffer from severe parasitic effects that lead to experience limited maximum frequency and reduced power performance at the device transceiver front end. The integrated circuits researchers…
In this work, the designs of a single-stage and 2-stage 2.4 GHz power amplifier (PA) are presented. The proposed PAs have been designed to provide high gain and improved efficiency using harmonic suppression and optimized impedance matching…
This paper presents a transformer-based three- transmission-line (Tline) series Doherty power amplifier (PA) implemented in 65-nm CMOS, targeting broadband K/Ka-band applications. By integrating an impedance-scaling network into the output…
In this article, we present a dual-band 28/38-GHz power amplifier (PA) with inter-band suppression for millimeter-wave 5G communications. The dual-band operation is achieved using a center-tapped transformer network with an extra resonator…
In this paper we describe the status of the first prototype of the 60 GHz wireless Multi-gigabit data transfer topology currently under development at University of Heidelberg using IBM 130 nm SiGe HBT BiCMOS technology. The 60 GHz band is…
This paper presents the first multiband mm-wave linear Doherty PA in silicon for broadband 5G applications. We introduce a new transformer-based on-chip Doherty power combiner, which can reduce the impedance transformation ratio in power…
We describe five high-voltage (60 to 550V peak to peak), high-speed (1-300ns rise time; 1.3-300MHz bandwidth) linear amplifiers for driving capacitive or resistive loads such as electro-optic modulators. The amplifiers use bipolar…
Waveform optimization has recently been shown to be a key technique to boost the efficiency and range of far-field wireless power transfer (WPT). Current research has optimized transmit waveform adaptive to channel state information (CSI)…
This letter reports high performance beta-(AlxGa1-x)2O3/Ga2O3 Heterostructure FET (HFET) with improved regrowth process. Highly scaled I shaped gate have been fabricated with degenerately doped (N++) source/drain contact regrown by ozone…
In this paper, a quasi-asymmetric Doherty power amplifier (PA) is designed without load modulation using the GaAs 0.25{\mu}m pHEMT technology to reach an enlarged output power back-off (OPBO) with circuitry solutions in order to overcome…
We have characterized a semiconductor amplifier laser system which provides up to 200mW output after a single-mode optical fiber at 780nm wavelength. The system is based on a tapered semiconductor gain element, which amplifies the output of…
A design strategy for achieving broadband optical gain in GaSb-based semiconductor amplifiers operating beyond 2 \mu m is presented. By employing asymmetric GaInSb/AlGaAsSb quantum wells (QWs) of varying thicknesses, a flat and wide gain…
High Electron Mobility Transistors (HEMTs) are most suitable for harsh environments as they operate reliably under extreme conditions such as high voltages, high temperatures, radiation exposure and corrosive atmospheres. In this article,…
This paper presents a Gm-C dynamic amplifier with high linearity and high temperature and power supply voltage stability. The main part of the amplifier employs two asymmetric differential pairs to enhance transconductance linearity. The…
Advances in power electronics have made it possible to achieve high power levels, e.g., reaching GW in grids, or alternatively high output bandwidths, e.g., beyond MHz in communication. Achieving both simultaneously, however, remains…
We report on the design and characterization of a high-power amplifier with an output power of 36.5 dBm for a frequency range of 50 MHz to 1000 MHz with a total gain of 40 dB. The amplifier is optimized for driving acousto-optic and…
In this work, dynamic load modulation of high power amplifiers using a varactor-based tunable matching network is presented. The feasibility of dynamic tuning and efficiency enhancement of this technique is demonstrated using a modular…
A novel topology for a high gain two-stage amplifier is proposed. The proposed circuit is designed in a way that the non-dominant pole is at output of the first stage. A positive capacitive feedback (PCF) around the second stage introduces…
This report describes the design and proposal of a wireless link capable of broadcasting at 1 Gbps. For this application, isotropic antennas, 256 QAM modulation, and BER level less than 1e-5, without using error correction coding, were…
We present an all-fiber design for a Tm-based fiber amplifier that can tune over 1992-2065 nm with 300-350 W single-frequency (<100 kHz) output. Over 180 W is achieved out to 2085 nm with <10% ASE content without utilizing ASE spectral…