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We describe DSiD, a fast simulation Delphes detector for the International Linear Collider (ILC) based on the full simulation performance of the SiD detector. SiD is one of two detectors described in the ILC Technical Design Report (TDR).…
We report a concept low gain avalanche diode (LGAD) detector to be integrated into TOPSiDE, which is being developed for EIC (Electron-Ion Collider) project. The LGAD detector will be taking its place to resolve requirement of…
Low Gain Avalanche Diodes (LGADs) are thin (20-50 $\mu m$)silicon di ode sensors with modest internal gain (typically 5 to 50) and exceptional time resolution (17 $ps$ to 50 $ps$). However, the granularity of such devices is limited to the…
We are developing position sensitive silicon detectors (PSDs) which have an electrode at each of four corners so that incident position of a charged particle can be obtained with signal from the electrodes. It is expected that the position…
It is foreseen to significantly increase the luminosity of the LHC in order to harvest the maximum physics potential. Especially the Phase-II-Upgrade foreseen for 2023 will mean unprecedented radiation levels, significantly beyond the…
Silicon pad sensors with novel functions of higher timing resolution (LGAD: Low Gain Avalanche Detector) and higher position resolution (PSD: Position Sensitive Detector) are studied for an application to Silicon-Tungsten electromagnetic…
4-dimensional (4D) trackers with ultra fast timing (10-30 ps) and very fine spatial resolution (O(few $\mu$m)) represent a new avenue in the development of silicon trackers, enabling new physics capabilities beyond the reach of the existing…
This contribution presents the design, production, and initial testing of newly developed 4H-SiC Low Gain Avalanche Detectors (LGADs). The evaluation includes performance metrics such as the internal gain layer's efficiency in enhancing…
Ultra-Fast Silicon Detectors (UFSDs) are n-in-p silicon detectors that implement moderate gain (typically 5 to 25) using a thin highly doped p++ layer between the high resistivity p-bulk and the junction of the sensor. The presence of gain…
Low Gain Avalanche Detectors (LGADs) are silicon semiconductor sensors with an implanted thin p-doped multiplication layer that is designed to provide low gain. Most importantly, LGADs are specifically engineered to provide excellent…
In the extreme environments of high-luminosity colliders, traditional planar silicon sensors suffer severe radiation-induced performance degradation and fail to satisfy the stringent demands of high-precision tracking and high-speed timing…
The development of detectors that provide high resolution in four dimensions has attracted wide-spread interest in the scientific community for applications in high-energy physics, nuclear physics, medical imaging, mass spectroscopy as well…
The Low Gain Avalanche Diodes (LGADs) are promising particle detectors for timing resolution better than $50$ ps under a high radiation environment. This study investigates n-in-p LGAD architecture, focusing on ultra-thin sensors of…
The high-luminosity upgrade of the CERN LHC requires the replacement of the CMS tracking detector to cope with the increased radiation fluence while maintaining its excellent performance. An extensive R\&D program, aiming at using 3D pixel…
The SiD Detector is one of two detector designs for the future International Linear Collider (ILC) that were validated in 2012 SiD features a compact, cost-constrained design for precision Higgs and other measurements, and sensitivity to a…
The broad energy response, low electronic read noise, and good energy resolution have made X-ray Charge-Coupled Devices (CCDs) an obvious choice for developing soft X-ray astronomical instruments over the last half century. They also come…
This work presents timing measurements of 4H-SiC Low Gain Avalanche Detectors (4H-SiC LGADs) using beta particles from a ${}^{90}$Sr source. The 4H-SiC LGADs exhibit fast signal responses, and a time resolution of 61~ps was achieved,…
The wide-bandgap semiconductor 4H-silicon carbide (4H-SiC) offers a compelling combination of radiation hardness, thermal stability, and high critical electric field for particle detection in harsh environments. To compensate for the…
A silicon 3D detector with a single cell of 50x50 um2 was produced and evaluated for timing applications. The measurements of time resolution were performed for 90Sr electrons with dedicated electronics used also for determining time…
3D silicon detectors, in which the electrodes penetrate the sensor bulk perpendicular to the surface, have recently undergone a rapid development from R\&D over industrialisation to their first installation in a real high-energy-physics…