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Strain engineering is one of the most effective approaches to manipulate the physical state of materials, control their electronic properties, and enable crucial functionalities. Because of their rich phase diagrams arising from competing…

Advanced interface engineering provides a way to control the ground state of correlated oxide heterostructures, which enables the shaping of future electronic and magnetic nanodevices with enhanced performance. An especially promising and…

We present a theoretical investigation of the electronic structure of rutile (metallic) and M$_1$ and M$_2$ monoclinic (insulating) phases of VO$_2$ employing a fully self-consistent combination of density functional theory and embedded…

Strongly Correlated Electrons · Physics 2016-08-03 W. H. Brito , M. C. O. Aguiar , K. Haule , G. Kotliar

We employ density functional theory plus dynamical mean field theory and identify the physical origin of why two layers of SrVO$_3$ on a SrTiO$_3$ substrate are insulating: the thin film geometry lifts the orbital degeneracy which in turn…

We show, by using a correlated Jastrow wave function and a mapping onto a classical model, that the two-dimensional Mott transition in a simple half-filled one-band model can be unconventional and very similar to the binding-unbinding…

Strongly Correlated Electrons · Physics 2009-11-11 Manuela Capello , Federico Becca , Seiji Yunoki , Sandro Sorella

We describe the two-dimensional Mott transition in a Hubbard-like model with nearest neighbors interactions based on a recent solution to the Zamolodchikov tetrahedron equation, which extends the notion of integrability to two-dimensional…

Strongly Correlated Electrons · Physics 2008-12-10 Federico L. Bottesi , Guillermo R. Zemba

Vanadium dioxide(VO$_2$) is a paradigmatic example of a strongly correlated system that undergoes a metal-insulator transition at a structural phase transition. To date, this transition has necessitated significant post-hoc adjustments to…

Strongly Correlated Electrons · Physics 2017-12-20 Huihuo Zheng , Lucas K. Wagner

Nonvolatile control of the Mott transition is a central goal in correlated-electron physics, offering access to fascinating emergent states and great potential for technological applications. Compared to chemical or mechanical approaches,…

Modification and control over the vaporization kinetics of microfluidic droplets may have strong utilitarian implications in several scientific and technological applications. The article reports the control over the vaporization kinetics…

Fluid Dynamics · Physics 2020-06-02 Purbarun Dhar , Vivek Jaiswal , Hanumant Chate , Lakshmi Sirisha Maganti

We consider the effect of a local interatomic repulsion on synthetic heterostructures where a discrete synthetic dimension is created by Raman processes on top of $SU(N)$-symmetric two-dimensional lattice systems. At a filling of one…

Quantum Gases · Physics 2023-03-28 Matteo Ferraretto , Andrea Richaud , Lorenzo Del Re , Leonardo Fallani , Massimo Capone

We investigate the role of strong Coulomb interactions beyond the standard Hubbard model in two distinct physical contexts. First, we analyze the superconducting phase transition occurring near the Mott metal-insulator transition. Second,…

Strongly Correlated Electrons · Physics 2026-01-16 Karol I. Wysokiński , Marcin M. Wysokiński

A heterostructure of a semi-infinite metal and a Mott insulator is considered. It is supposed that both materials have an identical lattice spacing and hopping integrals and differ in the Hubbard repulsion which is negligible in the metal…

Strongly Correlated Electrons · Physics 2015-05-13 A. Sherman , N. Voropajeva

Here we demonstrate that significant progress in this area may be achieved by introducing structural elements that form hydrogen bonds with environment. Considering several examples of hybrid framework materials with different structural…

THz amplitude modulators and switches are considered to be the main building blocks of future THz communication systems. Despite rapid progress, modulation and switching devices in this electromagnetic spectrum lag far behind other…

We study the doping-driven Mott metal-insulator transition for multi-orbital Hubbard models with Hund's exchange coupling at finite temperatures. As in the single-orbital Hubbard model, the transition is of first-order within dynamical mean…

Strongly Correlated Electrons · Physics 2019-08-05 Jakob Steinbauer , Luca de' Medici , Silke Biermann

Doping is an effective way to tune the property of metal oxides1-5, for achieving functional oxide electronics6-8. Previously we developed a controllable hydrogen doping technology at ambient conditions by use of electron-proton synergistic…

Applied Physics · Physics 2021-03-30 Yuliang Chen , Changlong Hu , Liyan Xie , Xiaoyu Zhou , Bowen Li , Hui Ren , Liang Li , Guobin Zhang , Jun Jiang , Chongwen Zou

Two-dimensional transition metal-dichalcogenides are emerging as efficient and cost-effective electrocatalysts for hydrogen evolution reaction (HER). However, only the edge sites of their trigonal prismatic phase show HER-electrocatalytic…

Quantum confinement has made it possible to detect and manipulate single-electron charge and spin states. The recent focus on two-dimensional (2D) materials has attracted significant interests on possible applications to quantum devices,…

Vanadium sesquioxide (V2O3) is an archetypal Mott insulator in which the atomic positions and electron correlations change as temperature, pressure or doping are varied giving rise to different structural, magnetic or electronic phase…

Strongly Correlated Electrons · Physics 2024-06-12 P. Homm , M. Menghini , J. W. Seo , S. Peters , J. -P. Locquet

The vicinity of a Mott insulating phase has constantly been a fertile ground for finding exotic quantum states, most notably the high Tc cuprates and colossal magnetoresistance manganites. The layered transition metal dichalcogenide 1T-TaS2…

Strongly Correlated Electrons · Physics 2017-12-06 Shuang Qiao , Xintong Li , Naizhou Wang , Wei Ruan , Cun Ye , Peng Cai , Zhenqi Hao , Hong Yao , Xianhui Chen , Jian Wu , Yayu Wang , Zheng Liu