Related papers: Imaging the Acceptor Wave Function Anisotropy in S…
Crystalline silicon is currently being discussed as test-mass material for future generations of gravitational wave detectors that will operate at cryogenic temperatures. We present optical absorption measurements on a large-dimension…
Hole spins in semiconductor quantum dots or bound to acceptor impurities show promise as potential qubits, partly because of their weak and anisotropic hyperfine couplings to proximal nuclear spins. Since the hyperfine coupling is weak, it…
Single-crystal silicon wafers were hyperdoped respectively by sulfur, selenium, and tellurium element using ion implantation and nanosecond laser melting. The hyperdoping of such chalcogen elements endowed the treated silicon with a strong…
The integration of scanning tunneling microscopy (STM) and electron spin resonance (ESR) spectroscopy has emerged as a powerful and innovative tool for discerning spin excitations and spin-spin interactions within atoms and molecules…
Spin-wave resonance (SWR) is a newly emerged method for studying surface magnetic anisotropy and surface spin-wave modes (SSWMs) in (Ga,Mn)As thin films. The existence of SSWMs in (Ga,Mn)As thin films has recently been reported in the…
A cylindrical-water-resonator-based absorber with ultra-broad operating band at microwave band is demonstrated theoretically and experimentally for the first time. By utilizing dielectric resonator (DR) mode and spoof surface plasmon…
An ideal one-dimensional electronic system is formed along atomic chains on Au-decorated vicinal silicon surfaces but the nature of its low temperature phases has been puzzled for last two decades. Here, we unambiguously identify the low…
It has been shown that electron transitions, as measured in a scanning tunnelling microscope (STM), are related to chemical interactions in a tunnelling barrier. Here, we show that the shape and apparent height of subatomic features in an…
We study the mode conversion and resonant absorption phenomena occurring in a slab of a stratified anisotropic medium, optical axes of which are tilted with respect to the direction of inhomogeneity, using the invariant imbedding theory of…
We demonstrate that in semiconductor quantum dots wave functions probed by imaging techniques based on local tunneling spectroscopies like STM show characteristic signatures of electron-electron Coulomb correlation. We predict that such…
Over the last two decades, scanning tunnelling microscopy (STM) has become one of the most important ways to investigate the structure of crystal surfaces. STM has helped achieve remarkable successes in surface science such as finding the…
We demonstrate an unexpectedly strong surface-plasmonic absorption at the interface of silver and high-index dielectrics based on electron and photon spectroscopy. The measured bandwidth and intensity of absorption deviate significantly…
The fourfold degeneracy of the boron acceptor ground state in silicon, which is easily lifted by any symmetry breaking perturbation, allows for a strong inhomogeneous broadening of the boron-related electron paramagnetic resonance (EPR)…
Tunneling spectroscopy of epitaxial (100) oriented \chem{YBa_2Cu_3O_{7-\delta}} films was performed using an STM at 4.2 K. On atomically smooth areas, tunneling spectra revealing clear U-shaped gaps with relatively low zero bias conductance…
Spin-polarized scanning tunneling microscopy (SP-STM) experiments on ultrathin films with non-collinear spin textures demonstrate that resonant tunneling allows for atomic-scale spin-sensitive imaging in real space at tip-sample distances…
When the sulfur element is hyperdoped into crystalline silicon to a supersaturated density of 1020 cm-3, it can enhance the sub-bandgap light absorption of silicon from 0 to 70%, with the antireflection of surface dome structures. On the…
Stepped well-ordered semiconductor surfaces are important as nanotemplates for the fabrication of one-dimensional nanostructures which are candidates of intriguing electronic properties. Therefore a detailed understanding of the underlying…
Silicon self-assembly at step edges in the initial stage of homoepitaxial growth on a vicinal Si(111) surface is studied by scanning tunneling microscopy (STM). The resulting atomic structures change dramatically from a parallel array of…
We report on acoustically driven spin resonances in atomic-scale centers in silicon carbide at room temperature. Specifically, we use a surface acoustic wave cavity to selectively address spin transitions with magnetic quantum number…
Transition metal (TM) defects in silicon carbide have favorable spin coherence properties and are suitable as quantum memory for quantum communication. To characterize TM defects as quantum spin-photon interfaces, we model defects that have…