Related papers: Low-loss Sb$_2$S$_3$ Optical Phase Shifter Enabled…
The development of the next generation of optical phase change technologies for integrated photonic and free-space platforms relies on the availability of materials that can be switched repeatedly over large volumes and with low optical…
Phase change materials (PCMs) have long been used as a storage medium in rewritable compact disk and later in random access memory. In recent years, the integration of PCMs with nanophotonic structures has introduced a new paradigm for…
Photonic integrated circuits currently use platform intrinsic thermo-optic and electro-optic effects to implement dynamic functions such as switching, modulation and other processing. Currently, there is a drive to implement field…
Adaptable, reconfigurable and programmable are key functionalities for the next generation of silicon-based photonic processors, neural and quantum networks. Phase change technology offers proven non-volatile electronic programmability,…
Non-volatile phase-change materials with large optical contrast are essential for future tunable nanophotonics. Antimony trisulfide (Sb2S3) has recently gained popularity in this field due to its low absorption in the visible spectral…
Reconfigurable beam splitters capable of being arbitrarily programmed for the power splitting ratios are vital for the adaptive optical networks and photonic computing. Conventional mechanisms such as thermo-optic, free-carrier, or…
We report on the fabrication and optimization of semi-transparent antimony sulfide (Sb$_2$S$_3$) thin-film solar cells in a superstrate configuration, using RF magnetron sputtering of metallic antimony followed by post-deposition…
As2S3 film doped with erbium is prepared using multi-layer magnetron sputtering. The optical properties were measured by reflectance spectroscopy, and its chemical composition is examined by x-ray photoelectron, Rutherford backscattering,…
Phase change materials (PCMs) have gained a tremendous interest as a means to actively tune nanophotonic devices through the large optical modulation produced by their amorphous to crystalline reversible transition. Recently, materials such…
Nb3Sn and V3Si thin films are promising candidates as thin films for the next generation of superconducting radio-frequency (SRF) cavities. However, sputtered films often suffer from stoichiometry and strain issues during deposition and…
We report an electrically actuated, low-loss non-volatile optical switch based on the phase-change material (PCM) Sb2Se3 integrated on a silicon nitride (Si3N4) platform. The device is fabricated using an 8-inch wafer-scale process flow,…
Thin films of the correlated transition-metal oxide LaNiO$_3$ undergo a metal-insulator transition when their thickness is reduced to a few unit cells. Here, we use angle-resolved photoemission spectroscopy to study the evolution of the…
The effect of sputtering power ($P$=60 W-180 W) on the electrochromic properties of nickel oxide films deposited on ITO-coated glass substrates by the RF magnetron sputtering technique was investigated. Crystalline structure and morphology…
Epitaxial Ba0.5Sr0.5TiO3 thin films were prepared on Nb-doped SrTiO3 (100)substrates by the pulsed laser deposition technique, and were studied by measuring the Ti 2p - 3d resonant photoemission spectra in the valence-band region as a…
In this study, we investigate the impact of formamidinium bromide (FABr) over-stoichiometry in the precursor solution on the optoelectronic properties and morphology of the resulting films of formamidinium lead bromide (FAPbBr_3). Optical…
Light strongly interacts with structures that are of a similar scale to its wavelength; typically nanoscale features for light in the visible spectrum. However, the optical response of these nanostructures is usually fixed during the…
The antimony-based chalcogenide Sb2Se3 is a rapidly emerging material for photonic phase change applications owing to its ultra-low optical losses at telecommunication wavelengths in both crystalline and amorphous phases. Here, we…
Elemental antimony (Sb) is a promising material for phase-change memory, neuromorphic computing and nanophotonic applications, because its compositional simplicity can prevent phase segregation upon extensive programming. Scaling down the…
The non-linear and tunable optical constants of phase-change materials associated with their phase-switching have been utilized in reconfigurable optical devices. For example, one possible application of phase-change thin films is for…
A femtosecond laser-irradiated crystallizing technique is tried to convert amorphous Sb2Te3 film into crystalline film. Sensitive coherent phonon spectroscopy (CPS) is used to monitor the crystallization of amorphous Sb2Te3 film at the…