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Spin orbit torque (SOT) has become a promising approach to efficiently manipulate the magnetization switching in spintronic devices. As a main factor to impact the device performance, the high quality interface is essentially desired, which…
Antiferromagnets are magnetically ordered materials which exhibit no net moment and thus are insensitive to magnetic fields. Antiferromagnetic spintronics aims to take advantage of this insensitivity for enhanced stability, while at the…
5d transition metal Pt is the canonical spin Hall material for efficient generation of spin-orbit torques (SOTs) in Pt/ferromagnetic layer (FM) heterostructures. However, for a long while with tremendous engineering endeavors, the…
To realize the very objective of spintronics, namely the development of ultra-high frequency and energy-efficient electronic devices, an ultrafast and scalable approach to switch magnetic bits is required. Magnetization switching with spin…
The magnetization manipulation by spin-orbit torques (SOTs) in nonmagnetic-metal (NM)/ferromagnet (FM) heterostructures has provided great opportunities for spin devices. Besides the conventional spin Hall effect (SHE) in heavy metals with…
Knots, characterized by topological invariants called the Hopf number $H$, arise from the intertwining of strings and exhibit diverse configurations. The knot structures have recently been observed in condensed matters, as examplified by a…
Spin-orbit torque (SOT) based magnetic random access memory (MRAM) is envisioned as an emerging non-volatile memory due to its ultra-high speed and low power consumption. The field-free switching schema in SOT devices is of great interest…
The magnitude of spin-orbit torque (SOT), exerted to a ferromagnet (FM) from an adjacent heavy metal (HM), strongly depends on the amount of spin currents absorbed in the FM. We exploit the large spin absorption at the Ru interface to…
Current-induced spin-orbit torque (SOT) has emerged as a promising method for achieving energy-efficient magnetization switching in advanced spintronic devices. However, technological advancement has been inadequate because an external…
The technique of conventional ferromagnet/heavy-metal spin-orbit torque (SOT) offers significant potential for enhancing the efficiency of magnetic memories. However, it faces fundamental physical limitations, including hunting effects from…
Since the discovery of the spin orbit torque (SOT) induced by spin Hall effect in heavy metals, much effort has been devoted to understanding the mechanism of the charge-to-spin conversion as well as to developing new schemes for high…
Motivated by recent experiments observing a large antidamping spin-orbit torque (SOT) on the surface of a three-dimensional topological insulator, we investigate the origin of the current-induced SOT beyond linear-response theory. We find…
Reducing energy dissipation while increasing speed in computation and memory is a long-standing challenge for spintronics research. In the last 20 years, femtosecond lasers have emerged as a tool to control the magnetization in specific…
Spin-orbit torque (SOT)-induced magnetization switching shows promise for realizing ultrafast and reliable spintronics devices. Bipolar switching of perpendicular magnetization via SOT is achieved under an in-plane magnetic field collinear…
Spin-orbit-torque magnetic random access memory (SOT-MRAM) is a promising technology for the next generation of data storage devices. The main bottleneck of this technology is the high reversal current density threshold. This outstanding…
Spin-orbit torque (SOT) presents a promising avenue for energy-efficient spintronics devices, surpassing the limitations of spin transfer torque. While extensively studied in heavy metals, SOT in antiferromagnetic quantum materials remains…
A new class of spin-transfer torque magnetic random access memory (STT-MRAM) is discussed, in which writing is achieved using thermally initiated magnonic current pulses as an alternative to conventional electric current pulses. The…
Neuromorphic hardware as a non-Von Neumann architecture has better energy efficiency and parallelism than the conventional computer. Here, with numerical modeling spin-orbit torque (SOT) device using current-induced SOT and Joule heating…
Efficient manipulation of magnetic materials is essential for spintronics. In spin-current generator/magnet bilayers, the efficiency of spin-orbit torques per magnetic layer thickness scales inversely with the magnetic layer thickness,…
Neuromorphic computing, which seeks to replicate the brain's ability to process information, has garnered significant attention due to its potential to achieve brain-like computing efficiency and human cognitive intelligence. Spin-orbit…