Related papers: Electroforming Kinetics in HfOx/Ti RRAM: Mechanism…

Transition metal oxide memristors, or resistive random-access memory (RRAM) switches, are under intense development for storage-class memory because of their favorable operating power, endurance, speed, and density. Their commercial…

Resistive switching devices based on transition metal oxides require formation of a conductive filament in order for the device to be able to switch. Such filaments have been proposed to form by the reduction of the oxide due to application…

Emerging analog resistive random access memory (RRAM) based on HfOx is an attractive device for non-von Neumann neuromorphic computing systems. The differences in temperature dependent conductance drift among cells hamper computing…

Much effort has been devoted to device and materials engineering to realize nanoscale resistance random access memory (RRAM) for practical applications, but there still lacks a rational physical basis to be relied on to design scalable…

Interface-type resistive switching (RS) devices with lower operation current and more reliable switching repeatability exhibits great potential in the applications for data storage devices and ultra-low-energy computing. However, the…

For neuromorphic engineering to emulate the human brain, improving memory density with low power consumption is an indispensable but challenging goal. In this regard, emerging RRAMs have attracted considerable interest for their unique…

With the broad recent research on ferroelectric hafnium oxide for non-volatile memory technology, depolarization effects in HfO2-based ferroelectric devices gained a lot of interest. Understanding the physical mechanisms regulating the…

The filamentation instability of counterpropagating symmetric beams of electrons is examined with 1D and 2D particle-in-cell (PIC) simulations, which are oriented orthogonally to the beam velocity vector. The beams are uniform, warm and…

In a uniform radio-frequency (RF) plasma between a large electrode pair, the addition of an axial magnetic field induces diverse longitudinal filaments. To reveal its pattern dynamics, we conduct two-dimensional (2D) Particle-In-Cell (PIC)…

Resistive memory-based reconfigurable systems constructed by CMOS-RRAM integration hold great promise for low energy and high throughput neuromorphic computing. However, most RRAM technologies relying on filamentary switching suffer from…

While two-terminal HfOX (x<2) memristor devices have been studied for ion transport and current evolution, there have been limited reports on the effect of the long-range thermal environment on their performance. In this work,…

Edge-localized-mode (ELM) filaments are crucial for cross-field transport at the tokamak edge; yet, their dynamics are often analyzed using the cold-ion approximation, despite experimental data indicating that Ti~Te . This study employs a…

We perform generalized gradient approximation (GGA) simulations of interfaces between two Conductive Metal-Oxides (CMO, namely TaO and TiO) and cubic hafnium oxide ($HfO_2$) in the context of bilayer Resistive Random Access Memory (ReRAM)…

The ramp-reversal memory (RRM) effect in metal-insulator transition metal oxides (TMOs), a non-volatile resistance change induced by repeated temperature cycling, has attracted considerable interest in neuromorphic computing and…

We present a multiscale simulation framework to compute the current vs. voltage (I-V ) characteristics of metal/oxide/metal structures building the core of conductive bridging random access memory (CBRAM) cells and to shed light on their…

Liquid crystal elastomers represent a novel class of programmable shape-transforming materials whose shape change trajectory is encoded in the material's nematic director field. Using three-dimensional nonlinear finite element…

We study the structural and electronic properties of various hafnium sub-oxides HfzO from z = 9 to z = 0.5, by ab initio simulation using Density Functional Theory. The stability of these sub-oxides is studied against monoclinic HfO2. The…

Fermi gases in two dimensions display a surprising collective behavior originating from the head-on carrier collisions. The head-on processes dominate angular relaxation at not-too-high temperatures $T\ll T_F$ owing to the interplay of…

In this paper, we report the effect of filament radius and filament resistivity on the saturated temperature of ZnO, TiO2, WO3 and HfO2 Resistive Random Access Memory (RRAM) devices. We resort to the thermal reaction model of RRAM for the…

Controllable quantized conductance states of TiN/Ti/HfO$_x$/TiN memristors are realized with great precision through a pulse-mode reset procedure, assisted with analytical differentiation of the condition of the set procedure, which…