Related papers: Integrated Silicon Nitride Devices via Inverse Des…
The development of low-loss reconfigurable integrated optical devices enables further research into technologies including photonic signal processing, analogue quantum computing, and optical neural networks. Here, we introduce digital…
Silicon nitride based photonic integrated circuits offer a wavelength operation window in the near infrared down to visible light, which makes them attractive for life science applications. However, they exhibit significantly different…
The use of the Silicon-on-Insulator (SOI) platform has been prominent for realizing CMOS-compatible, high-performance photonic integrated circuits (PICs). But in recent years, the silicon-nitride-on-silicon-dioxide (SiN-on-SiO$_2$) platform…
Silicon nitride (Si3N4), as a complementary metal-oxide-semiconductor (CMOS) material, finds wide use in modern integrated circuit (IC) technology. The past decade has witnessed tremendous development of Si3N4 in photonic areas, with…
Organic semiconductors have potentials for a broad range of applications; however, it is difficult to be integrated with traditional inorganic material to meet the need of further application. Based on low-temperature silicon nitride (SiNx)…
Optical isolators and circulators are indispensable for photonic integrated circuits (PICs). Despite of significant progress in silicon-on-insulator (SOI) platforms, integrated optical isolators and circulators have been rarely reported on…
This work deals with the inverse design in the field of photonic crystal based devices. Here an inverse method containing a fast and accurate simulation method integrated with a competent optimization method is presented. Two designs…
The availability of thin-film lithium niobate on insulator (LNOI) and advances in processing have led to the emergence of fully integrated LiNbO3 electro-optic devices, including low-voltage, high-speed modulators, electro-optic frequency…
Silicon nanowires (SiNWs) attached to a wafer substrate are converted to inversely tapered silicon nanocones (SiNCs). After excitation with visible light, individual SiNCs show a 200-fold enhanced integral band-to-band luminescence as…
Low phase noise lasers based on the combination of III-V semiconductors and silicon photonics are well established in the near-infrared spectral regime. Recent advances in the development of low-loss silicon nitride-based photonic…
Recent advances in the design and fabrication of on-chip optical microresonators has greatly expanded their applications in photonics, enabling metrology, communications, and on-chip lasers. Designs for these applications require fine…
Silicon photonic integrated circuit (PIC) builds on the demand for a low cost approach from established silicon-based manufacturing infrastructure traditionally built for electronics. Besides its natural abundance, silicon has desirable…
Heterogeneous and monolithic integration of the versatile low loss silicon nitride platform with low temperature materials such as silicon electronics and photonics, III-V compound semiconductors, lithium niobate, organics, and glasses, has…
Silicon nitride (SiN) has emerged as a popular platform for nonlinear photonics due to its large bandgap, relatively large nonlinear index of refraction, and high degree of CMOS-compatibility. Nonlinear optical processes in microresonators…
Silicon-based integrated photonics has demonstrated significant advances in miniaturization and performance, yet critical challenges remain in achieving efficient on-chip communication at high bandwidths. Plasmonic devices on silicon and…
Scandium-doped aluminum nitride has recently emerged as a promising material for quantum photonic integrated circuits (PICs) due to its unique combination of strong second-order nonlinearity, ferroelectricity, piezoelectricity, and…
The foundry development of integrated photonics has revolutionized today's optical interconnect and datacenters. Over the last decade, we have witnessed the rising of silicon nitride (Si$_3$N$_4$) integrated photonics, which is currently…
Inverse-designed nanophotonic devices offer promising solutions for analog optical computation. High-density photonic integration is critical for scaling such architectures toward more complex computational tasks and large-scale…
Silicon is an excellent material for microelectronics and integrated photonics with untapped potential for mid-IR optics. Despite broad recognition of the importance of the third dimension, current lithography methods do not allow…
Inverse design (ID) is a computational method that systematically explores a design space to find optimal device geometries based on specific performance criteria. In silicon photonics, ID often leads to devices with design features that…