Related papers: Modulation transfer spectroscopy of $^7$Li D1 line
We demonstrate electrical control of the A-exciton interband transition in mono- and few-layer $MoS_{2}$ crystals embedded into photocapacitor devices via the DC Stark effect. Electric field dependent low-temperature photoluminescence…
We have completed measurements of two low-lying excited-state electric-dipole (E1) transition amplitudes in lead. Our measured reduced matrix elements of the $(6s^2 6p^2)^3P_1 \to (6s^2 6p7s)^3P_0$ transition at 368.3 nm and the 405.8 nm…
We report on the design, implementation and characterization of fully digital control loops for laser frequency stabilization, differential phase-locking and performance optimization of the optical metrology system on-board the LISA…
A variety of on-orbit imaging and spectroscopic observations are used to characterize the Charge Transfer Efficiency (CTE) of the Charge-Coupled Device (CCD) of the Space Telescope Imaging Spectrograph (STIS) aboard the Hubble Space…
Atomic sized two-level systems (TLSs) in amorphous dielectrics are known as a major source of loss in superconducting devices. In addition, individual TLS are known to induce large frequency shifts due to strong coupling to the devices.…
Based on a simple model for spin-polarized scanning tunneling spectroscopy (SP-STS) we study how tip magnetization and electronic structure affects the differential conductance (dI/dV) tunneling spectrum of an Fe(001) surface. We take into…
We report high speed optical modulation in a resonant tunneling relaxation oscillator consisting of a resonant tunneling diode (RTD) integrated with a unipolar optical waveguide and incorporated in a package with a coplanar waveguide…
Expanding the use of physical degrees of freedom to employ spatial multiplexing of data in optical communication is considered the most disruptive and effective solution to meet the capacity demand of the growing information traffic.…
We present a scheme for stabilizing multiple lasers at wavelengths between 795 and 866 nm to the same atomic reference line. A reference laser at 852 nm is stabilized to the Cs D2 line using a Doppler-free frequency modulation technique.…
We have constructed a Fourier-transform spectrometer (FTS) operating between 50 and 330 GHz with minimum volume (355 x260 x64 mm) and weight (13 lbs) while maximizing optical throughput (100 $\mathrm{mm}^2$ sr) and optimizing the spectral…
The temperature ($T$) dependent metal-insulator transition (MIT) in VO$_2$ is investigated using bulk sensitive hard x-ray ($\sim$ 8 keV) valence band, core level, and V 2$p-3d$ resonant photoemission spectroscopy (PES). The valence band…
Charge density waves (CDW) have been studied at the surface of a cleaved TTF-TCNQ single crystal using a low temperature scanning tunneling microscope (STM) under ultra high vacuum (UHV) conditions. All CDW phase transitions of TTF-TCNQ…
The Synthetic Aperture Microwave Imaging (SAMI) diagnostic has conducted proof-of-principle 2D Doppler backscattering (DBS) experiments on MAST. SAMI actively probes the plasma edge using a wide (+-40 degrees vertical and horizontal) and…
A new technique based on superposition of two speckle patterns is proposed and demonstrated for controlled modulation of the spatial polarization distribution of the resultant speckle. It is demonstrated both theoretically and…
We report on a modified transfer technique for atomically thin materials integrated onto microelectromechanical systems (MEMS) for studying strain physics and creating strain-based devices. Our method tolerates the non-planar structures and…
We investigate a ionising electronic transition under resonant pumping. We demonstrate that, above a critical value of the pump intensity, a novel metastable electronic bound state is created, which can decay into the free electron…
We present an all solid-state narrow line-width laser source emitting $670\,\mathrm{mW}$ output power at $671\,\mathrm{nm}$ delivered in a diffraction-limited beam. The \linebreak source is based on a fre-quency-doubled diode-end-linebreak…
Atomically precise lateral heterojunctions based on transition metal dichalcogenides provide a new platform for exploring exciton Mott transition in one-dimension. To investigate the intrinsically non-equilibrium Mott transition, we…
Transition metal dichalcogenides (TMDs) attract significant attention as potential building blocks in next-generation electronic devices. On the other hand, a comprehensive understanding of how various defects affect local electronic…
Deepening the understanding of interface-type Resistive Switching (RS) in metal/oxide heterojunctions is a key step for the development of high-performance memristors and Schottky rectifiers. In this study, we address the role of…