Atomically precise lateral heterojunctions based on transition metal dichalcogenides provide a new platform for exploring exciton Mott transition in one-dimension. To investigate the intrinsically non-equilibrium Mott transition, we employed ultrafast microscopy with ~ 200 fs temporal resolution to image the transport of different exciton phases in a type II WSe2-WS1.16Se0.84 lateral heterostructure. These measurements visualized the extremely rapid expansion of a highly non-equilibrium electron-hole (e-h) plasma phase with a Fermi velocity up to 3.2*10^6 cm*s-1. An abrupt first-order exciton Mott transition at a density of ~ 5*10^12 cm-2 at room temperature was revealed by ultrafast microscopy, which could be disguised as a continuous transition in conventional steady-state measurements. These results point to exciting new opportunities for designing atomically thin lateral heterojunctions as novel highways of excitons and collective e-h plasma for high-speed electronic applications.
@article{arxiv.2111.07887,
title = {Non-Equilibrium First-Order Exciton Mott Transition at Monolayer Lateral Heterojunctions Visualized by Ultrafast Microscopy},
author = {Long Yuan and Biyuan Zheng and Qiuchen Zhao and Roman Kempt and Thomas Brumme and Agnieszka Beata Kuc and Chao Ma and Shibin Deng and Anlian Pan and Libai Huang},
journal= {arXiv preprint arXiv:2111.07887},
year = {2021}
}