Being able to control the neutral excitonic flux is a mandatory step for the development of future room-temperature two-dimensional excitonic devices. Semiconducting Monolayer Transition Metal Dichalcogenides (TMD-ML) with extremely robust and mobile excitons are highly attractive in this regard. However, generating an efficient and controlled exciton transport over long distances is a very challenging task. Here we demonstrate that an atomically sharp TMD-ML lateral heterostructure (MoSe2-WSe2) transforms the isotropic exciton diffusion into a unidirectional excitonic flow through the junction. Using tip-enhanced photoluminescence spectroscopy (TEPL) and a modified exciton transfer model, we show a discontinuity of the exciton density distribution on each side of the interface. We introduce the concept of exciton Kapitza resistance, by analogy with the interfacial thermal resistance referred to as Kapitza resistance. By comparing different heterostructures with or without top hexagonal boron nitride (hBN) layer, we deduce that the transport properties can be controlled, over distances far greater than the junction width, by the exciton density through near-field engineering and/or laser power density. This work provides a new approach for controlling the neutral exciton flow, which is key toward the conception of excitonic devices.
@article{arxiv.2306.13352,
title = {Kapitza-resistance-like exciton dynamics in atomically flat MoSe$_{2}$-WSe$_{2}$ lateral heterojunction},
author = {Hassan Lamsaadi and Dorian Beret and Ioannis Paradisanos and Pierre Renucci and Delphine Lagarde and Xavier Marie and Bernhard Urbaszek and Ziyang Gan and Antony George and Kenji Watanabe and Takashi Taniguchi and Andrey Turchanin and Laurent Lombez and Nicolas Combe and Vincent Paillard and Jean-Marie Poumirol},
journal= {arXiv preprint arXiv:2306.13352},
year = {2023}
}