Related papers: Probing Boron Vacancy Defects in hBN via Single Sp…
Optically active quantum defects in solids, such as the nitrogen vacancy (NV) center in diamond, are a leading modality for micron-scale and nanoscale (ultralow-mass) nuclear magnetic resonance (NMR) spectroscopy and imaging under ambient…
Optically-active spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of two-dimensional quantum sensing units offering optimal proximity to the sample being probed. In this work, we first demonstrate…
Quantum sensors based on spin-defect relaxation have become powerful tools for detecting faint magnetic signals, yet their operation has remained largely confined to low magnetic fields and gigahertz frequencies. Extending such sensors into…
Quantum sensing with solid-state spin defects has transformed nanoscale metrology, offering sub-wavelength spatial resolution with exceptional sensitivity to multiple signal types. Maximizing these advantages requires minimizing both the…
The boron-vacancy spin defect ($\text{V}_\text{B}^{-}$) in hexagonal boron nitride (hBN) has a great potential as a quantum sensor in a two-dimensional material that can directly probe various external perturbations in atomic-scale…
Two-dimensional (2D) materials hosting color centers and spin defects are emerging as key platforms for quantum technologies. However, the impact of reduced dimensionality on the spin-lattice relaxation time ($T_1$) of embedded defect spins…
Spin defects in solid-state materials are strong candidate systems for quantum information technology and sensing applications. Here we explore in details the recently discovered negatively charged boron vacancies ($V_B^-$) in hexagonal…
Spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of flexible two-dimensional quantum sensing platforms. Here we rely on hBN crystals isotopically enriched with either $^{10}$B or $^{11}$B to…
Spin defects in hexagonal boron nitride, and specifically the negatively charged boron vacancy (VB) centres, are emerging candidates for quantum sensing. However, the VB defects suffer from low quantum efficiency and as a result exhibit…
Color centers in hexagonal boron nitride (hBN) have recently emerged as promising candidates for a new wave of quantum applications. Thanks to hBN's high stability and 2-dimensional (2D) layered structure, color centers in hBN can serve as…
The negatively charged boron vacancy (VB-) in hexagonal boron nitride (hBN) has been extensively investigated as it offers a novel playground for two-dimensional quantum sensing, with ultimate proximity to target samples. However, its…
Detecting magnetic noise from small quantities of paramagnetic spins is a powerful capability for chemical, biochemical, and medical analysis. Quantum sensors based on optically addressable spin defects in bulk semiconductors are typically…
Optically addressable spin defects in wide-bandage semiconductors as promising systems for quantum information and sensing applications have attracted more and more attention recently. Spin defects in two-dimensional materials are supposed…
Spin defects in hexagonal Boron Nitride (hBN) attract increasing interest for quantum technology since they represent optically-addressable qubits in a van der Waals material. In particular, negatively-charged boron vacancy centers…
Quantum sensing based on solid-state spin defects provides a uniquely versatile platform for imaging physical properties at the nanoscale under diverse environmental conditions. Operation of most sensors used to-date is based on projective…
Since the initial discovery of optically addressable spins of the negatively charged boron vacancy defect (VB) in hexagonal boron nitride (hBN), substantial progress has been made, enabling promising applications in quantum sensing,…
We report an experimental study of the longitudinal relaxation time ($T_1$) of the electron spin associated with single nitrogen-vacancy (NV) defects hosted in nanodiamonds (ND). We first show that $T_1$ decreases over three orders of…
A single spin quantum sensor can quantitatively detect and image fluctuating electromagnetic fields via their effect on the sensor spin's relaxation time, thus revealing important information about the target solid-state or molecular…
Two-dimensional hexagonal boron nitride (hBN) has been known to host a variety of quantum emitters with properties suitable for a broad range of quantum photonic applications. Among them, the negatively charged boron vacancy (VB-) defect…
Hexagonal boron nitride (hBN) has emerged as a significant material for quantum sensing, particularly due to its ability to host spin active defects, such as the negatively charged boron vacancy (V$_\mathrm{B}^-$ center). The optical…