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Next-generation low-cost semiconductors such as halide perovskites exhibit optoelectronic properties dominated by nanoscale variations in their structure, composition and photophysics. While microscopy provides a proxy for ultimate device…
We used AlGaSb/AlGaAs material system for a theoretical study of photovoltaic performance of the proposed GaAs-based solar cell in which the type-II quantum dot (QDs) absorber is spatially separated from the depletion region. Due to…
Cu(In,Ga)Se2 (CIGSe)-based solar cells are promising candidates for efficient sunlight harvesting. However, their complex composition and microstructure can change under operation conditions, for instance heating from sun light illumination…
After the efficiency of organic photovoltaic (OPV) cells achieved more than 10%, the control of stability and degradation mechanisms of solar cells became a prominent task. The improvement of device efficiency due to incorporation of a…
We present inverted metamorphic Ga0.3In0.7As photovoltaic converters with sub-0.60 eV bandgaps grown on InP and GaAs substrates. The compositionally graded buffers in these devices have threading dislocation densities of 1.3x10^6 cm^-2 and…
The ever-increasing demand for high-capacity rechargeable batteries highlights the need for sensitive and accurate diagnostic technology for determining the state of a cell, for identifying and localizing defects, or for sensing capacity…
The perovskite semiconductor, CsPbI3, holds excellent promise for solar cell applications due to its suitable bandgap. However, achieving phase-stable CsPbI3 solar cells with high power conversion efficiency remains a major challenge.…
The efficiency of a solar cell is often limited by electron-hole recombination mediated by defect states within the band gap of the photovoltaic (PV) semiconductor. The Shockley-Read-Hall (SRH) model considers a static trap that can…
Carbon-electrode-based PSC devices are stressed under 1 Sun equivalent illumination in a stability setup, and different scan-speed dependent current-voltage (J-V) curves are measured during aging. The collected data is used to estimate…
Visual inspection of solar modules is an important monitoring facility in photovoltaic power plants. Since a single measurement of fast CMOS sensors is limited in spatial resolution and often not sufficient to reliably detect small defects,…
The photocurrent density-voltage (J(V)) curve is the fundamental characteristic to assess opto-electronic devices, in particular solar cells. However, it only yields information on the performance integrated over the entire active device…
The performances of various configurations of InGaN solar cells are compared using nextnano software. Here we compare a flat base graded wall GaN/InGaN structure, with an InxGa1-xN well with sharp GaN contact layers, and an InxGa1-xN…
We discuss an alternative approach to the detection of solar neutrinos using a coarsely segmented detector based on inverse-beta decay onto $^{160}$Gd or $^{176}$Yb. While it is know that similar approaches, already discussed in the…
Solar cells are semiconductor devices that generate electricity through charge generation upon illumination. For optimal device efficiency, the photo-generated carriers must reach the electrical contact layers before they recombine. A deep…
Space-resolved X-ray diffraction measurements performed on gradient-etched CuInGaSe2 (CIGS) solar cells provide information about stress and texture depth profiles in the absorber layer. An important parameter for CIGS layer growth…
High efficiencies of >30% are predicted for series-connected tandem solar cells when current-matching is achieved between the wide-bandgap top cell and silicon bottom cell. Sub-cells are typically optimised for current-matching based on the…
A multi-timescale hybrid model is proposed to study microscopically the degraded performance of electronic devices, covering three individual stages of radiation effects studies, including ultrafast displacement cascade, intermediate defect…
Accelerated degradation tests are used to provide accurate estimation of lifetime characteristics of highly reliable products within a relatively short testing time. Data from particular tests at high levels of stress (e.g., temperature,…
The influence of oxygen and carbon impurities on the concentrations of defects in silicon for detector uses, in complex fields of radiation, characteristic to high energy physics experiments, is investigated in the frame of the quantitative…
The enhancement of the fill factor in the current generation of perovskite solar cells is the key for further efficiency improvement. Thus, methods to quantify the fill factor losses are urgently needed. A classical method to quantify Ohmic…