Related papers: Amorphous phase-change memory alloy with no resist…
We characterized resistance drift in phase change memory devices in the 80 K to 300 K temperature range by performing measurements on 20 nm thick, ~70-100 nm wide lateral Ge2Sb2Te5 (GST) line cells. The cells were amorphized using 1.5-2.5 V…
Thermal transport properties bear a pivotal role in influencing the performance of phase change memory (PCM) devices, in which the PCM operation involves fast and reversible phase change between amorphous and crystalline phases. In this…
The layered crystal structure of Cr2Ge2Te6 shows ferromagnetic ordering at the two-dimensional limit, which holds promise for spintronic applications. However, external voltage pulses can trigger amorphization of the material in nanoscale…
Phase change materials (PCMs) have gained a tremendous interest as a means to actively tune nanophotonic devices through the large optical modulation produced by their amorphous to crystalline reversible transition. Recently, materials such…
In this paper, we offer large and realistic models of amorphous carbon spanning densities from 0.95 g/cm3 to 3.5 g/cm3 . The models are designed to agree as closely as possible with experimental diffraction data while simultaneously…
Amorphous interfacial complexions are particularly resistant to radiation damage and have been primarily studied in alloys with good glass-forming ability, yet recent reports suggest that these features can form even in immiscible alloys…
Amorphous solids form an enormous and underutilized class of materials. In order to drive the discovery of new useful amorphous materials further we need to achieve a closer convergence between computational and experimental methods. In…
We study amorphous solids with strong elastic disorder and find an un-jamming instability that exists, inter alia, in an harmonic model built using Euclidean random matrices (ERM). Employing the Zwanzig-Mori projection operator formalism…
Phase-change materials (PCMs) can switch between different crystalline states as a function of an external bias, offering a pronounced change of their dielectric function. In order to take full advantage of these features for active…
We study the viscoelastic response of amorphous polymers using theory and simulations. By accounting for internal stresses and considering instantaneous normal modes (INMs) within athermal non-affine theory, we make parameter-free…
The general and practical inversion of diffraction data-producing a computer model correctly representing the material explored - is an important unsolved problem for disordered materials. Such modeling should proceed by using our full…
One of the most widely used active materials for phase-change memories (PCM), the ternary stoichiometric compound Ge$_2$Sb$_2$Te$_5$ (GST), has a low crystallization temperature of around 150$^\circ$C. One solution to achieve higher…
Computer simulations have long been key to understanding and designing phase-change materials (PCMs) for memory technologies. Machine learning is now increasingly being used to accelerate the modelling of PCMs, and yet it remains…
We report an electrically actuated, low-loss non-volatile optical switch based on the phase-change material (PCM) Sb2Se3 integrated on a silicon nitride (Si3N4) platform. The device is fabricated using an 8-inch wafer-scale process flow,…
Amorphous insulators have localized wave functions that decay with the distance $r$ following exp($-r/\zeta$). Since nanoscale conduction is not excluded at $r<\zeta$, one may use amorphous insulators and take advantage of their size effect…
The development of thermal energy storage materials is the most attractive strategy to harvest the solar energy and increase the energy utilization efficiency. Phase change materials (PCMs) have received much attention in this research…
Structural colors generated due to light scattering from static all-dielectric metasurfaces have successfully enabled high-resolution, high-saturation, and wide-gamut color printing applications. Despite recent advances, most demonstrations…
Phase-change materials (PCMs) are increasingly recognised as promising platforms for tunable photonic devices due to their ability to modulate optical properties through solid-state phase transitions. Ultrathin and low-loss PCMs are highly…
Compute-in-memory (CIM) presents an attractive approach for energy-efficient computing in data-intensive applications. However, the development of suitable memory designs to achieve high-performance CIM remains a challenging task. Here, we…
Phase-change memory devices have found applications in in-memory computing where the physical attributes of these devices are exploited to compute in place without the need to shuttle data between memory and processing units. However,…