Related papers: A Physics-Based Circuit Model for Magnetic Tunnel …
The Tunneling Anisotropic Magneto-Thermopower (TAMT) and the Tunneling Anisotropic Spin-Seebeck (TASS) effects are studied for a magnetic tunnel junction (MTJ) composed of a ferromagnetic electrode, a zinc-blende semiconductor and a normal…
We present a computationally efficient strategy that allows to simulate magnetization switching driven by spin-transfer torque in magnetic tunnel junctions within a micromagnetic model coupled with a matrix-based non-equilibrium Green's…
We theoretically investigate the spin--wave spin current induced by the spin Seebeck effect in magnonic spin tunneling junctions (MSTJs) for arbitrary magnetization directions. We show that the MSTJ functions as a \textit{tunable} spin…
Neuromorphic computing uses brain-inspired principles to design circuits that can perform computational tasks with superior power efficiency to conventional computers. Approaches that use traditional electronic devices to create artificial…
Spin-polarized charge-currents induce magnetic tunnel junction (MTJ) switching by virtue of spin-transfer-torque (STT). Recently, by taking advantage of the spin dependent thermoelectric properties of magnetic materials, novel means of…
Perpendicular magnetic tunnel junctions (MTJ) with a bottom pinned reference layer and a composite free layer (FL) are investigated. Different thicknesses of the FL were tested to obtain an optimal balance between tunneling…
Brain-inspired learning in physical hardware has enormous potential to learn fast at minimal energy expenditure. One of the characteristics of biological learning systems is their ability to learn in the presence of various noise sources.…
Magnetic tunnel junctions (MTJs), that consist of two ferromagnetic electrodes separated by an insulating barrier layer, have non-trivial fundamental properties associated with spin-dependent tunneling. Especially interesting are fully…
We present the design and numerical simulation of a spiking neuron capable of on-chip machine learning. Built within the CMOS+X framework, the spiking neuron consists of an NMOS transistor combined with a magnetic tunnel junction (MTJ).…
HfO2-based ferroelectric tunnel junctions (FTJs) exhibit attractive properties for adoption in neuromorphic applications. The combination of ultra-low-power multi-level switching capability together with the low on-current density suggests…
The ever-increasing amount of data from ubiquitous smart devices fosters data-centric and cognitive algorithms. Traditional digital computer systems have separate logic and memory units, resulting in a huge delay and energy cost for…
The magnetic tunnel junctions (MTJ) based on van der Waals (vdW) materials possess atomically smooth interfaces with minimal element intermixing. This characteristic ensures that spin polarization is well maintained during transport,…
Magnetic Tunnel Junctions (MTJs) are of great interest for non-conventional computing applications. The Toffoli gate is a universal reversible logic gate, enabling the construction of arbitrary boolean circuits. Here, we present a…
We theoretically investigate the chaotic behavior of spin-torque ferromagnetic resonance in magnetic tunnel junctions (MTJs) with perpendicular magnetic anisotropy under thermal fluctuations. By calculating the Lyapunov exponent based on…
Magnetic materials play a key role in the contemporary industry, providing unique features with a wide application potential. To study physical phenomena and design new materials, it is important to possess an appropriate tool, a model…
Spin-torque memristors were proposed in 2009, which could provide fast, low-power and infinite memristive behavior for large-density non-volatile memory and neuromorphic computing. However, the strict requirements of combining high…
Magnetization dynamics described by the Landau-Lifshitz-Gilbert-Slonczewski (LLGS) equation can be formulated to have the form of the well-known two-level-system (TLS) equations. Recently, we showed that a DC spin-transfer torque (STT) term…
Magnetic tunnel junction-based molecular spintronics devices (MTJMSDs) are designed by covalently connecting the paramagnetic molecules across two ferromagnets (FM) electrodes of a magnetic tunnel junction (MTJ). MTJMSD provides…
We present a complete theory of the spin torque phenomena in a ultrasmall nanomagnet coupled to non-collinear ferromagnetic electrodes through tunnelling junctions. This model system can be described by a simple microscopic model which…
The development of machine learning interatomic potentials has immensely contributed to the accuracy of simulations of molecules and crystals. However, creating interatomic potentials for magnetic systems that account for both magnetic…