Related papers: Quasiparticle gap renormalization driven by intern…
The design of stacks of layered materials in which adjacent layers interact by van der Waals forces[1] has enabled the combination of various two-dimensional crystals with different electrical, optical and mechanical properties, and the…
The electrical, magnetic, thermal and optical characteristics of Gallium (Ga) doped silicene are investigated using density functional theory (DFT). The effect of doping is studied by tuning dopant concentrations as well as examining varied…
Ge with a quasi-direct band gap can be realized by strain engineering, alloying with Sn, or ultrahigh n-type doping. In this work, we use all three approaches together to fabricate direct-band-gap Ge-Sn alloys. The heavily doped n-type…
High resolution angle-resolved photoemission measurements have been carried out on (Sr,K)Fe$_2$As$_2$ superconductor (Tc=21 K). Three hole-like Fermi surface sheets are clearly resolved for the first time around the Gamma point. The overall…
We report phonon renormalisation in bilayer graphene as a function of doping. The Raman G peak stiffens and sharpens for both electron and hole doping, as a result of the non-adiabatic Kohn anomaly at the $\Gamma$ point. The bilayer has two…
Superconducting two-dimensional materials, and in particular few-layer graphene, offer an exciting platform for low-power electronics, yet the origin of their unconventional superconductivity remains an open question. Prevailing theories,…
This work reports information on the transience of hole doping in epitaxial graphene devices when nitric acid is used as an adsorbent. Under vacuum conditions, desorption processes are monitored by electrical and spectroscopic means to…
Two-dimensional (2D) InSe and WS$_2$ exhibit promising characteristics for optoelectronic and photoelectrochemical applications, e.g. photodetection and photocatalytic water splitting. However, both of them have poor absorption of visible…
The development of semiconductor electronics is shortly reviewed, beginning with the development of germanium devices (band gap $E_g=0.66$ eV) after world war II. Quickly a tendency to alternative materials with wider band gap became…
In this paper we present a review of bosonic renormalization effects on electronic carriers observed from angle-resolved photoemission spectra in the cuprates. We specifically discuss the viewpoint that these renormalizations represent…
Recent discovery of a novel hexagonal phase of GeSe (Gamma-GeSe) has triggered great interests in nanoelectronics applications owing to its electrical conductivity of bulk phase even higher than graphite while its monolayer is a…
Ideal Sharvin contact in a multimode regime shows the conductance $G\approx{}G_{\rm Sharvin}=g_0k_F{}W/\pi$ (with $g_0$ the conductance quantum, $k_F$ the Fermi momentum, and $W$ the contact width) accompanied by strongly suppressed…
The spatial arrangement of adsorbates deposited onto a clean surface in vacuum typically cannot be reversibly tuned. Here we use scanning tunneling microscopy to demonstrate that molecules deposited onto graphene field-effect transistors…
Tuneable electronic properties in transition metal dichalcogenides (TMDs) are essential to further their use in device applications. Here, we present a comprehensive scanning tunnelling microscopy and spectroscopy study of a doping-induced…
The unique property of bilayer graphene to show a band gap tunable by external electrical fields enables a variety of different device concepts with novel functionalities for electronic, optoelectronic and sensor applications. So far the…
Two-dimensional (2D) graphene and graphene-related materials (GRMs) show great promise for future electronic devices. Nevertheless, GRMs result distinct properties under the influence of the substrate that serves as support through uneven…
Research in semiconductor physics has advanced to the study of two-dimensional (2D) materials where the surface controls electronic transport. A scanning probe microscope (SPM) is an ideal tool to image electronic motion in these devices by…
Substrate engineering provides an opportunity to modulate the physical properties of quantum materials in thin film form. Here we report that TiSe$_2$ thin films grown on TiO$_2$ have unexpectedly large electron doping that suppresses the…
Band gap engineering of oxide semiconductors through doping is critical for photocatalysis and optoelectronics, yet the combinatorial space of dopant elements, substitution sites, and co-doping combinations far exceeds typical density…
Engineering and probing excitonic properties at the nanoscale remains a central challenge in quantum photonics and optoelectronics. While exciton confinement via electrical control and strain engineering has been demonstrated in 2D…