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The 3D local atomic structures and crystal defects at the interfaces of heterostructures control their electronic, magnetic, optical, catalytic and topological quantum properties, but have thus far eluded any direct experimental…

We study topological phase transitions and topological quantum field effect transistor in monolayer Molybdenum Disulfide (MoS2) using a two-band Hamiltonian model. Without considering the quadratic (q^2) diagonal term in the Hamiltonian, we…

Mesoscale and Nanoscale Physics · Physics 2018-04-30 H. Simchi , M. Simchi , M. Fardmanesh , F. M. Peeters

We present analytical model and molecular dynamics simulations of phonon heat transport in nanowires and nanoribbons with anharmonic lattices and dynamically rough surfaces and edges. In agreement with recent experiments on heat transport…

Statistical Mechanics · Physics 2011-12-30 Yuriy A. Kosevich , Alexander V. Savin

The ultimate limitations on carrier mobilities in metal dichalcogenides, and the dynamics associated with carrier relaxation, are unclear. We present measurements of the frequency-dependent conductivity of multilayer dichalcogenide MoS2 by…

Materials Science · Physics 2014-12-10 Jared H. Strait , Parinita Nene , Farhan Rana

All solids, whether crystalline or disordered, support elastic wave propagation with a linear dispersion relation in the long-wavelength limit. These waves, corresponding to low-frequency phonons, feature a vibrational density of states…

Soft Condensed Matter · Physics 2026-05-07 Edan Lerner , Eran Bouchbinder

The advent of monochromated electron energy-loss spectroscopy has enabled atomic-resolution vibrational spectroscopy, which triggered interest in spatially localized or quasi-localized vibrational modes in materials. Here we report the…

Materials Science · Physics 2023-10-13 De-Liang Bao , Mingquan Xu , Ao-Wen Li , Gang Su , Wu Zhou , Sokrates T. Pantelides

We report on the temperature dependence of in-plane E2g and out of plane A1g Raman modes in high quality few layers MoS2 (FLMS) prepared using a high temperature vapor-phase method. The materials obtained were investigated using…

Mesoscale and Nanoscale Physics · Physics 2013-05-15 Satyaprakash Sahoo , Anand P. S. Gaur , Majid Ahmadi , Maxime J-F Guinel , Ram S. Katiyar

Probing phonons, quasi-particle excitations and their coupling has enriched our understanding of these 2D materials and proved to be crucial for developing their potential applications. Here, we report comprehensive temperature, 4-330 K,…

Materials Science · Physics 2022-03-14 Deepu Kumar , Vivek Kumar , Rahul Kumar , Mahesh Kumar , Pradeep Kumar

Dynamics of an array of line defects interacting with a background elastic medium is studied in the linear regime. It is shown that the inertial coupling between the defects and the ambient phonons leads to an anomalous response behavior…

Statistical Mechanics · Physics 2009-11-07 Ali Najafi , Ramin Golestanian

The way nuclear motion affects electronic responses has become a very hot topic in materials science. Coherent acoustic phonons can dynamically modify optical, magnetic and mechanical properties at ultrasonic frequencies, with promising…

Mesoscale and Nanoscale Physics · Physics 2018-08-29 Edoardo Baldini , Tania Palmieri , Adriel Dominguez , Pascal Ruello , Angel Rubio , Majed Chergui

Heterostructures play significant roles in modern semiconductor devices and micro/nanosystems in a plethora of applications in electronics, optoelectronics, and transducers. While state-of-the-art heterostructures often involve stacks of…

Mesoscale and Nanoscale Physics · Physics 2017-12-21 Fan Ye , Jaesung Lee , Philip X. -L. Feng

The advancement of nanoscale electronics has been limited by energy dissipation challenges for over a decade. Such limitations could be particularly severe for two-dimensional (2D) semiconductors integrated with flexible substrates or…

We report two new first-order Raman modes in the spectra of few-layer MoS$_2$ at 286~cm$^{-1}$ and 471~cm$^{-1}$ for excitation energies above 2.4~eV. These modes appear only in few-layer MoS$_2$; therefore their absence provides an easy…

Materials Science · Physics 2015-06-17 Nils Scheuschner , Roland Gillen , Matthias Staiger , Janina Maultzsch

We theoretically study the modification of the energy spectrum of long-wavelength acoustic phonons due to the electron-phonon interaction in a three-dimensional topological Weyl semimetal under the influence of quantizing magnetic fields.…

Mesoscale and Nanoscale Physics · Physics 2020-02-12 Song-Bo Zhang , Jianhui Zhou

Atomically thin MoS$_{2}$ crystals have been recognized as a quasi-2D semiconductor with remarkable physics properties. This letter reports our Raman scattering measurements on multilayer and monolayer MoS$_{2}$, especially in the…

Mesoscale and Nanoscale Physics · Physics 2015-06-11 Hualing Zeng , Bairen Zhu , Kai Liu , Jiahe Fan , Xiaodong Cui , Q. M. Zhang

We present a comprehensive temperature dependent Raman measurements for horizontally aligned CVD grown layered MoS2 in a temperature range of 4 to 330 K under resonance condition. Our analysis of temperature dependent phonon frequency shift…

Materials Science · Physics 2021-05-26 Deepu Kumar , Birender Singh , Rahul Kumar , Mahesh Kumar , Pradeep Kumar

We simulate a model of repulsively interacting colloids on a commensurate two-dimensional triangular pinning substrate where the amount of heterogeneous motion that appears at melting can be controlled systematically by turning off a…

Soft Condensed Matter · Physics 2009-11-11 J. -X. Lin , C. Reichhardt , Z. Nussinov , Leonid P. Pryadko , C. J. Olson Reichhardt

In two-dimensional materials, structure difference induces the difference in phonon dispersions, leading to the anisotropy of in-plane thermal transport. Here, we report an exceptional case in layered PdSe2, where the bonding, force…

Materials Science · Physics 2021-12-30 Bin Wei , Junyan Liu , Qingan Cai , Ahmet Alatas , Ayman H. said , Chen Li , Jiawang Hong

Control on spatial location and density of defects in 2D materials can be achieved using electron beam irradiation. Conversely, ultralow accelerating voltages (less than or equal to 5kV) are used to measure surface morphology, with no…

Bi2O2Se belongs to a group of quasi-2D semiconductors that can replace silicon in future high-speed/low-power electronics. However, the correlation between crystal/band structure and other physical properties still eludes understanding:…