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The electronic properties of moir\'e heterostructures depend sensitively on the relative orientation between layers of the stack. For example, near-magic-angle twisted bilayer graphene (TBG) commonly shows superconductivity, yet a TBG…

Hexagonal boron nitride (hBN) has emerged as a promising two-dimensional (2D) material for many applications in photonics. Although its linear and nonlinear optical properties have been extensively studied, its interaction with…

We report three-dimensional (3D) structure determination of a twisted hexagonal boron nitride (h-BN) heterointerface from a single-view data set using multislice ptychography. We identify the buried heterointerface between two twisted h-BN…

Principal characteristics of interlayer interaction and relative motion of hexagonal boron nitride (h-BN) layers are investigated by the first-principles method taking into account van der Waals interactions. Dependences of the interlayer…

Mesoscale and Nanoscale Physics · Physics 2016-04-13 Alexander V. Lebedev , Irina V. Lebedeva , Andrey A. Knizhnik , Andrey M. Popov

Hexagonal boron nitride (hBN) is a prototypical high-quality two-dimensional insulator and an ideal material to study tunneling phenomena, as it can be easily integrated in vertical van der Waals devices. For spintronic devices, its…

The electronic properties of two-dimensional materials and their heterostructures can be dramatically altered by varying the relative angle between the layers. This makes it theoretically possible to realize a new class of twistable…

Mesoscale and Nanoscale Physics · Physics 2018-09-03 Rebeca Ribeiro-Palau , Changjian Zhang , Kenji Watanabe , Takashi Taniguchi , James Hone , Cory R. Dean

Artificially twisted heterostructures of semiconducting transition metal dichalcogenides (TMDs) offer unprecedented control over their electronic and optical properties via the spatial modulation of interlayer interactions and structural…

Materials Science · Physics 2023-01-25 Nikhil Tilak , Guohong Li , Takashi Taniguchi , Kenji Watanabe , Eva Y. Andrei

Encapsulating graphene in hexagonal Boron Nitride has several advantages: the highest mobilities reported to date are achieved in this way, and precise nanostructuring of graphene becomes feasible through the protective hBN layers.…

Mesoscale and Nanoscale Physics · Physics 2021-01-04 Yongping Du , Ning Xu , Xianqing Lin , Antti-Pekka Jauho

The relaxation of atomic positions to their optimal structural arrangement is crucial for understanding the emergence of new physical behavior in long scale superstructures in twisted bilayers of two-dimensional materials. The amount of…

Materials Science · Physics 2025-01-22 Samuel J. Magorrian , Anas Siddiqui , Nicholas D. M. Hine

Lateral superlattices in 2D materials are emerging as a powerful platform for exploring novel quantum phenomena, which can be realized through the proximity coupling in forming moir\'e pattern with another layer. This approach, however, is…

Mesoscale and Nanoscale Physics · Physics 2021-04-14 Pei Zhao , Chengxin Xiao , Wang Yao

When two-dimensional atomic layers of different materials are brought into close proximity to form van der Waals (vdW) heterostructures, interactions between adjacent layers significantly influence their physicochemical properties. These…

Stacking two atomic crystals with a twist between their crystal axes produces moir\'e potentials that modify the electronic properties. Here we show that double moir\'e potentials generated by superposing three atomic crystals create a new…

Mesoscale and Nanoscale Physics · Physics 2024-12-16 Xinyuan Lai , Guohong Li , Angela M. Coe , Jedediah H. Pixley , Kenji Watanabe , Takashi Taniguchi , Eva Y. Andrei

Hexagonal boron nitride (BN) is widely used as a substrate and gate insulator for two-dimensional (2D) electronic devices. The studies on insulating properties and electrical reliability of BN itself, however, are quite limited. Here, we…

Materials Science · Physics 2015-10-08 Y. Hattori , K. Watanabe , T. Taniguchi , K. Nagashio

Due to their low surface mass density, two-dimensional materials with a strong piezoelectric response are interesting for nanoelectromechanical systems with high force sensitivity. Unlike graphene, the two sublattices in a monolayer of…

Mesoscale and Nanoscale Physics · Physics 2016-08-05 Matthias Droth , Guido Burkard , Vitor M. Pereira

The two-dimensional atomically thin insulator hexagonal boron nitride (h-BN) constitutes a new paradigm in tunnel based devices. A large band gap along with its atomically flat nature without dangling bonds or interface trap states makes it…

Mesoscale and Nanoscale Physics · Physics 2014-11-14 André Dankert , M. Venkata Kamalakar , Abdul Wajid , R. S. Patel , Saroj P. Dash

We report a theoretical study of dielectric properties of models of amorphous Boron Nitride, using interatomic potentials generated by machine learning. We first perform first-principles simulations on small (about $100$ atoms in the…

The relative twist angle in heterostructures of two-dimensional (2D) materials with similar lattice constants result in a dramatic alteration of the electronic properties. Here, we investigate the electrical and magnetotransport properties…

Mesoscale and Nanoscale Physics · Physics 2021-06-09 Manabendra Kuiri , Saurabh Kumar Srivastav , Sujay Ray , Kenji Watanabe , Takashi Taniguchi , Tanmoy Das , Anindya Das

We show that hexagonal boron nitride (hBN), a two-dimensional insulator, when subjected to an external superlattice potential forms a new paradigm for electrostatically tunable excitons in the near- and mid-ultraviolet (UV). The imposed…

Mesoscale and Nanoscale Physics · Physics 2024-08-08 Pedro Ninhos , Christos Tserkezis , N. Asger Mortensen , Nuno M. R. Peres

The effect of an hexagonal boron nitride (hBN) layer close aligned with twisted bilayer graphene (TBG) is studied. At sufficiently low angles between twisted bilayer graphene and hBN, $\theta_{hBN} \lesssim 2^\circ$, the graphene electronic…

Strongly Correlated Electrons · Physics 2020-10-28 Tommaso Cea , Pierre A. Pantaleon , Francisco Guinea

Boron phosphide (BP) is a (super)hard semiconductor constituted of light elements, which is promising for high demand applications at extreme conditions. The behavior of BP at high temperatures and pressures is of special interest but is…