Related papers: Hole spin splitting in a Ge quantum dot with finit…
We have studied the edge spin accumulation in a high mobility two-dimensional electron gas formed in a symmetric well with two subbands. This study is strongly motivated by the recent experiment of Hernandez et al. [Phys. Rev. B {\bf 88},…
We present measurements on gate-defined double quantum dots in Ge-Si core-shell nanowires, which we tune to a regime with visible shell filling in both dots. We observe a Pauli spin blockade and can assign the measured leakage current at…
We use the two-pulse spin-dependent photon echo technique to study the in-plane hole spin anisotropy in a 20~nm-thick CdTe/Cd$_{0.76}$Mg$_{0.24}$Te single quantum well by exciting the donor-bound exciton resonance. We take advantage of the…
Spins in gate-defined silicon quantum dots are promising candidates for implementing large-scale quantum computing. To read the spin state of these qubits, the mechanism that has provided the highest fidelity is spin-to-charge conversion…
We present a detailed theoretical study of the electronic spectrum and Zeeman splitting in hole quantum wires. The spin-3/2 character of the topmost bulk-valence-band states results in a strong variation of subband-edge g factors between…
Control of electron spin coherence via external fields is fundamental in spintronics. Its implementation demands a host material that accommodates the highly desirable but contrasting requirements of spin robustness to relaxation mechanisms…
Spin qubits in germanium gate-defined quantum dots have made considerable progress within the last few years, partially due to their strong spin-orbit coupling and site-dependent $g$-tensors. While this characteristic of the $g$-factors…
The large spin-orbit coupling in the valence band of group IV semiconductors provides an electric field knob for spin-qubit manipulation. This fact can be exploited with acceptor based qubits. Spin manipulation of holes bound to acceptors…
Hole spins in group IV quantum dots are a highly promising way to develop CMOS compatible spin qubits owing to their inherent spin-orbit coupling, which enables fast, coherent, and electrical spin control. However, spin-orbit coupling not…
This work investigates and compares the impact of strain on heavy hole (HH) spin qubits in SiGe/Ge and light hole (LH) spin qubits in GeSn/Ge heterostructures, focusing on energy states, g-factor, Rabi frequency, spin relaxation, and…
We have studied the behavior of the electronic energy spin-splitting of InGaAs-InAlAs based double quantum wells (narrow gap structures) under in-plane magnetic and transverse electric fields. We have developed an improved 8x8 version of…
We fabricated Quantum Dot (QD) devices using a standard SOI CMOS process flow, and demonstrated that the spin of confined electrons could be controlled via a local electrical-field excitation, owing to inter-valley spin-orbit coupling. We…
By utilizing the site-dependent spin quantization axis in semiconductor quantum dot (QD) arrays, shuttling-based spin qubit gates have become an appealing approach to realize scalable quantum computing due to the circumvention of using…
Planar germanium quantum wells have recently been shown to host hard-gapped superconductivity. Additionally, quantum dot spin qubits in germanium are well-suited for quantum information processing, with isotopic purification to a nuclear…
It is a conventional wisdom that the helical edge states of quantum spin Hall (QSH) insulator are particularly stable due to the topological protection of time-reversal symmetry. Here, we report the first experimental observation of an…
We present quantitative measurements and calculations of the spin-orbit induced zero-magnetic-field spin-splitting in two-dimensional (2D) hole systems in modulation-doped GaAs (311)A quantum wells. The results show that the splitting is…
Non-charge based logic in single-hole spin of semiconductor quantum dots (QDs) can be controlled by anisotropic gate potentials providing a notion for making next generation solid-state quantum devices. In this study, we investigate the…
Electron states are studied for quantum dots in a strained Si quantum well, taking into account both valley and orbital physics. Realistic geometries are considered, including circular and elliptical dot shapes, parallel and perpendicular…
We study the influence of sample termination on the electronic properties of the novel quantum spin Hall insulator monolayer $1T'$-WTe$_2$. For this purpose, we construct an accurate, minimal 4-orbital tight-binding model with spin-orbit…
We study a vertical double quantum dot (DQD) in a Si/Si$_{1-x}$Ge$_x$/Si double-well heterostructure for full electrical control of electron Loss-DiVincenzo (LD) spin qubits, using realistic device modeling and numerical simulations. Due to…