Related papers: Linear Response Conductance of Metallic Single Ele…
The conductance of a single-atom contact is sensitive to the coupling of this contact atom to the atoms in the leads. Notably for the transition metals this gives rise to a considerable spread in the observed conductance values. The mean…
We examine the effects of electron-electron interactions on transport between edge states in a multilayer integer quantum Hall system. The edge states of such a system, coupled by interlayer tunneling, form a two-dimensional, chiral metal…
Quantum fluctuations of the charge in the single electron box are investigated. The rounding of the Coulomb staircase caused by virtual electron tunneling is determined by perturbation theory up to third order in the tunneling conductance…
In this article we study examples of systematic biases that can occur in quantum Monte Carlo methods due to the accumulation of non-linear expectation values, and approaches by which these errors can be corrected. We begin with a study of…
Metallic nanoparticles offer possibilities to build basic electric devices with new functionality and improved performance. Due to the small volume and the resulting low self-capacitance, each single nanoparticle exhibits a high charging…
We investigate a hybrid metallic island / single dopant electron pump based on fully-depleted silicon on insulator technology. Electron transfer between the central metallic island and the leads is controlled by resonant tunneling through…
We consider mesoscopic fluctuations of the Coulomb blockade oscillations in a disordered metallic grain in an external magnetic field coupled to a metallic lead by a tunneling contact with a large conductance $g_T$ and capacitively coupled…
The tunneling conductance is calculated as a function of the gate voltage in wide temperature range for the single quantum dot systems with Coulomb interaction. We assume that two orbitals are active for the tunneling process. We show that…
We investigate transient dynamic response of an Anderson impurity quantum dot to a family of ramp-up driving voltage applied to the single coupling lead. Transient current is calculated based on a hierarchical equations of motion formalism…
We consider resonant transmission through a finite-length quantum wire connected to leads via finite transparency junctions. The coherent electron transport is strongly modified by the Coulomb interaction. The low-temperature…
The accurate description of non-ideal quantum many-body systems is of prime importance for a host of applications within physics, quantum chemistry, material science, and related disciplines. At finite temperatures, the gold standard is…
We present extensive new \emph{ab initio} path integral Monte Carlo (PIMC) simulations of the uniform electron gas (UEG) in the high-temperature regime, $8\leq\theta=k_\textnormal{B}T/E_\textnormal{F}\leq128$. This allows us to study the…
We report on single-electron shuttling experiments with a silicon metal-oxide-semiconductor quantum dot at 300 mK. Our system consists of an accumulated electron layer at the Si/SiO_2 interface below an aluminum top gate with two additional…
Employing the Anderson impurity model, we study tunneling properties through an ideal quantum dot near the conductance minima. Considering the Coulomb blockade and the quantum confinement on an equal footing, we have obtained current…
Aharonov-Bohm oscillations are studied in the magnetoconductance of a micron-sized open quantum ring coupled capacitively to a Coulomb-blockaded quantum dot. As the plunger gate of the dot is modulated and tuned through a conductance…
We develop the two-instanton approximation to the current-voltage characteristic of a single electron transistor within the Ambegaokar-Eckern-Sch\"on model. We determine the temperature and gate voltage dependence of the Coulomb blockade…
In this Letter, we study the real-ime dynamics of single-electron pumpings. We modulate the left tunneling barrier along with the dot level but slightly changing the right barrier to operate the single-electron pumping device at zero bias.…
We study the effect of the exchange interactions in small superconducting grains near the Coulomb blockade regime. We extend the standard description of the grain in terms of a single collective variable, the charge and its conjugated…
Dirac electrons, which have been found in the single-component molecular conductor [Pd(dddt)_2] under pressure, are examined by calculating the conductivity and resistivity in terms of a tight-binding model for several pressures of P GPa,…
Frequency dependent dynamic electromechanical response of the mixed ionic-electronic conductor film to a periodic electric bias is analyzed for different electronic and ionic boundary conditions. Dynamic effects of mobile ions concentration…