Related papers: Current Flow Mapping in Conducting Ferroelectric D…
Online training of deep neural networks (DNN) can be significantly accelerated by performing in-situ vector matrix multiplication in a crossbar array of analog memories. However, training accuracies often suffer due to device non-idealities…
Shifting electrically a magnetic domain wall (DW) by the spin transfer mechanism is one of the future ways foreseen for the switching of spintronic memories or registers. The classical geometries where the current is injected in the plane…
The analysis of the electronic surface properties of transition metal oxides being key materials for future nanoelectronics requires a direct characterization of the conductivity with highest spatial resolution. Using local conductivity…
Chiral domain walls of Neel type emerge in heterostructures that include heavy metal (HM) and ferromagnetic metal (FM) layers owing to the Dzyaloshinskii-Moriya (DM) interaction at the HM/FM interface. In developing storage class memories…
Polarization switching mechanisms in ferroelectric materials are fundamentally linked to local domain structure and presence of the structural defects, which both can act as nucleation and pinning centers and create local electrostatic and…
We predict the electrical generation and injection of domain walls into a ferromagnetic nano-wire without the need of an assisting magnetic field. Our theory shows that above a critical current $j_{c}$ domain walls are injected into the…
Dielectric microstructures have been reported to have negative influences on perm-selective ion transportation because ions do not migrate in areas where the structures are located. However, the structure can promote the transportation if…
A scanning force microscope tip is used to write ferroelectric domains in He-implanted single-crystal lithium niobate and subsequently probe them by piezoresponse force microscopy. Investigation of cross-sections of the samples showed that…
Transient negative capacitance effects in epitaxial ferroelectric Pb(Zr$_{0.2}$Ti$_{0.8}$)O$_3$ capacitors are investigated with a focus on the dynamical switching behavior governed by domain nucleation and growth. Voltage pulses are…
Domain wall morphologies in ferroelectrics are believed to be largely shaped by electrostatic forces. Here, we show that for conducting domain walls, the morphology also depends on the details of the charge-carrier band structure. For…
We investigate the effect of curvature on the energy and stability of domain wall configurations in curved cylindrical nanotubes and nanowires. We use micromagnetic simulations to calculate the phase diagram for the transverse wall (TW) and…
Lead halide perovskites have emerged as promising materials for optoelectronic applications due to their exceptional properties. In the all-inorganic CsPbBr3 perovskites, ferroelastic domains formed during phase transitions enhance bulk…
The discovery and precise manipulation of atomic-size conductive ferroelectric domain defects, such as geometrically confined walls, offer new opportunities for a wide range of prospective electronic devices, and the so-called walltronics…
Coherent control of domain wall dynamics offers a route to fast manipulation of magnetic textures beyond thermally activated motion. We demonstrate resonant excitation of linear and nonlinear dynamics of a pinned domain wall in a…
Several experimental observations of objects carrying fractional flux quanta in superconductors were recently reported. Here, we provide microscopic solutions for vortices carrying a variable fraction of magnetic flux quantum and domain…
The control of the dielectric and conductive properties of device-level systems is important for increasing the efficiency of energy- and information-related technologies. In some cases, such as neuromorphic computing, it is desirable to…
The recent demonstration of current-driven magnetic domain wall logic [Z. Luo et al., Nature 579:214] was based on a three-input logic gate that was identified as a reconfigurable NAND/NOR function. We reinterpret this logic gate as a…
Extraordinary physical properties arise at polar interfaces in oxide materials, including the emergence of two-dimensional electron gases, sheet-superconductivity, and multiferroicity. A special type of polar interface are ferroelectric…
Electroforming is used to initiate the memristive response in metal/oxide/metal devices by creating a filamentary conduction path in the oxide film. Here we use a simple photoresist-based detection technique to map the spatial distribution…
Oxide interfaces, including the LaAlO3/SrTiO3 interface, have been a subject of intense interest for over a decade due to their rich physics and potential as low dimensional nanoelectronic systems. The field has reached the stage where…