Related papers: Current Flow Mapping in Conducting Ferroelectric D…
The depinning of a domain wall in ferromagentic metal via macroscopic quantum tunneling is studied based on the Hubbard model. The dynamics of the magnetization verctor is shown to be governed by an effective action of Heisenberg model with…
The coupling between a current and a Bloch wall is examined in the half-metal limit of the double exchange model. The conduction electrons transfer angular momentum to the Bloch wall with 100% efficiency in the absence of pinning. The wall…
Electrical switching of N\'eel order in an antiferromagnetic insulator is desirable as a basis for memory applications. Unlike electrically-driven switching of ferromagnetic order via spin-orbit torques, electrical switching of…
Domain switching pathways in ferroelectric materials visualized by dynamic Piezoresponse Force Microscopy (PFM) are explored via variational autoencoder (VAE), which simplifies the elements of the observed domain structure, crucially…
Review is devoted to the recent theoretical studies of the impact of domain structure of ferroelectric substrate on graphene conductance. An analytical description of the hysteresis memory effect in a field effect transistor based on…
Since its first isolation in 2004, graphene has been found to host a plethora of unusual electronic transport phenomena, making it a fascinating system for fundamental studies in condensed-matter physics as well as offering tremendous…
Memristors are among the most promising elements for modern microelectronics, having unique properties such as quasi-continuous change of conductance and long-term storage of resistive states. However, identifying the physical mechanisms of…
The current-driven domain wall motion in a ratchet memory due to spin-orbit torques is studied from both full micromagnetic simulations and the one dimensional model. Within the framework of this model, the integration of the anisotropy…
We study the superconducting proximity effect in a superconductor-ferromagnet-superconductor (SFS) heterostructure, containing a domain wall in the ferromagnetic region. For the ferromagnet we assume an alloy with an exchange splitting of…
Ferroelectric charged domain walls are known for their high electrical conductivity, making them promising candidates for applications in modern electronics. A remarkably high conductivity and nominal charge density has been found in the…
Flat phonon bands in fluorite ferroelectrics (HfO2 or ZrO2) shrink polar domains laterally to an irreducible half-unit-cell width (0.27 nm) within which the vertical arrangement of dipoles is expected to remain uniform. We report on the…
Combining scanning electron microscopy (SEM) and electron-beam-induced current (EBIC) imaging with transport measurements, it is shown that the current flowing across a two-terminal oxide-based capacitor-like structure is preferentially…
Room temperature coexistence of ferromagnetism and ferroelectricity in a thin film of a novel material of nominal composition PbTi0.5Fe0.5O3-d is probed by standard ferroelectric and ferromagnetic hysteresis loop measurements and by…
The effect of domain walls on electron transport has been investigated in microfabricated Fe wires (0.65 to 20 $\mu m$ linewidths) with controlled stripe domains. Magnetoresistance (MR) measurements as a function of domain wall density,…
Nanoelectronic devices based on ferroelectric domain walls (DWs), such as memories, transistors, and rectifiers, have been demonstrated in recent years. Practical high-speed electronics, on the other hand, usually demand operation…
The magnitude of the relative permittivity of the ferroelectric nematic phase (NF) is under a lively scientific discussion since the phase was recently discovered. Dielectric spectroscopy measurements (DSM) give a huge value of relative…
Ferroelectric materials exhibit a switchable, spontaneous polarization at the unit cell level--an attractive property utilized in many emerging technologies including, among others, high-density memory storage, low-power transistors, and…
Ferroelectrics usually adopt a multi-domain state with domain walls separating domains with polarization axes oriented differently. It has long been recognized that domain walls can dramatically impact the properties of ferroelectric…
Electric control of multiple domain walls (DWs) motion is demonstrated by Pt/Co/Pt nanotracks with perpendicular magnetic anisotropy. Due to the weak microstructural disorders with small DW propagation field, the purely current-driven DW…
Polarization in ferroelectric domains arises from atomic-scale structural variations that govern macroscopic functionalities. The interfaces between these domains known as domain walls host distinct physical responses, making their…