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Van der Waals materials composed of stacks of individual atomic layers have attracted considerable attention due to their exotic electronic properties that can be altered by, for example, manipulating the twist angle of bilayer materials or…

Materials Science · Physics 2021-05-14 Michael J Zachman , Jacob Madsen , Xiang Zhang , Pulickel M Ajayan , Toma Susi , Miaofang Chi

A laser multicharged ion source was used to perform interfacial treatment of the 4H-SiC/ SiO2 interface using B and Ba ions. A Q-switched Nd:YAG laser (wavelength {\lambda} = 1064 nm, pulse width {\tau} = 7 ns, and fluence F = 135 J/cm2)…

Materials Science · Physics 2021-01-26 Md Haider Shaim , Hani E. Elsayed-Ali

Interfaces remain one of the major issues in limiting the understanding and designing polymer nanocomposites due to their complexity and pivotal role in determining the ultimate composites properties. In this study, we take multi-walled…

Materials Science · Physics 2017-11-20 Yuhan Li , Faxiang Qin , Huan Wang , Hua-Xin Peng

Graphene films prepared by heating the SiC(000-1) surface (the C-face of the {0001} surfaces) in a Si-rich environment are studied using low-energy electron diffraction (LEED) and low-energy electron microscopy (LEEM). Upon graphitization,…

Mesoscale and Nanoscale Physics · Physics 2015-09-16 Guowei He , N. Srivastava , R. M. Feenstra

We have constructed microscopic, structurally-relaxed atomistic models of Si/SiO$_2$ superlattices. The structural distortion and oxidation-state characteristics of the interface Si atoms are examined in detail. The role played by the…

Materials Science · Physics 2015-06-24 Pierre Carrier , Laurent J. Lewis , M. W. Chandre Dharma-wardana

In semiconductor manufacturing processes, silicon dioxide films are commonly used as barrier layers, insulating layers, and protective layers. Coherence scanning interferometry (CSI) offers thin film thickness measurements with a…

Optics · Physics 2025-03-11 Lixuan Xu , Cheng Chen , Rong Su

Understanding the emergent electronic structure in twisted atomically thin layers has led to the exciting field of twistronics. However, practical applications of such systems are challenging since the specific angular correlations between…

Given the importance of incorporating various superconducting materials to device fabrication or substrate development, studying the interface for possible interactions is warranted. In this work, NbN films sputter-deposited on 4H-SiC were…

The broadening and optical parameters of TiO2/SiO2 transition layers depending on the ion energy have been investigated using the Rutherford Backscattering Spectrometry (RBS) and Ellipstrometry Spectroscopy (ES) methods. The TiO2/SiO2…

A set of Mo/Si periodic multilayers is studied by non destructive analysis methods. The thickness of the Si layers is 5 nm while the thickness of the Mo layers changes from one multilayer to another, from 2 to 4 nm. This enables us to probe…

Broadband mid-infrared (mid-IR) spectroscopy applications could greatly benefit from today's well-developed, highly scalable silicon photonics technology; however, this platform lacks broadband transparency due to its reliance on absorptive…

We investigate the effect of SiC stacking on the 4H-SiC/SiO$_2$ interface, both in the presence and absence of O defects, which appear during thermal oxidation, via first principles calculations. It is known that 4H-SiC(0001) has two…

Materials Science · Physics 2015-08-10 Christopher James Kirkham , Tomoya Ono

Vertically stacked van der Waals heterostructures are a lucrative platform for exploring the rich electronic and optoelectronic phenomena in two-dimensional materials. Their performance will be strongly affected by impurities and defects at…

Thin organic films and two-dimensional (2D) molecular assemblies on solid surfaces yield the potential for applications in molecular electronics, optoelectronics, catalysis, and sensing. These applications rely on the intrinsic electronic…

Interface magnetism and topological structure of Fe on organic semiconductor film (Alq3) have been studied and compared with Fe film deposited directly on Si (100) substrate. To get information on the diffused Fe layer at the Fe/Alq3…

We investigate the role of architected thin films in the interfacial failure properties of bi-layer composites. Our results show that, while graded structures can be used to prescribe failure at the interface, they do not offer significant…

Materials Science · Physics 2026-03-10 Christian Greff , Leon Pyka , Michael Zaiser , Paolo Moretti

The silicon/silicon dioxide (Si/SiO2) interface plays a crucial role in the performance, cost, and reliability of most modern microelectronic devices, from the basic transistor to flash memory, digital cameras, and solar cells. Today the…

Optics · Physics 2009-11-11 Matthew Borselli , Thomas J. Johnson , Oskar Painter

We investigate nonlinear transmission in a layered structure consisting of a slab of positive index material (PIM) with Kerr-type nonlinearity and a sub-wavelength layer of linear negative index material (NIM) sandwiched between…

Optics · Physics 2009-11-13 N. M. Litchinitser , I. R. Gabitov , A. I. Maimistov , V. M. Shalaev

Short-term physico-chemical reactions at the interface between bioactive glass particles and biological fluids are studied and we focus our attention on the measurements of O/Si atomic ratio. The studied bioactive glass is in the…

Biological Physics · Physics 2007-05-23 V. Blanchet , E. Jallot , J. Michel , L. Wortham , D. Laurent-Maquin , G. Balossier

Epitaxial Fe4N thin films grown on lattice-matched LaAlO3 (LAO) substrate using sputtering and molecular beam epitaxy techniques have been studied in this work. Within the sputtering process, films were grown with conventional direct…

Materials Science · Physics 2019-12-04 Nidhi Pandey , S. Putter , S. M. Amir , V. R. Reddy , D. M. Phase , J. Stahn , Ajay Gupta , Mukul Gupta