Related papers: Unveiling the effect of adding B4C at the W-on-Si …
We investigate the use of Low Energy Ion Scattering (LEIS) to characterize buried interfaces of ultra-thin films. LEIS spectra contain depth-resolved information in the so-called sub-surface signal. However, the exact correlation between…
This study investigates the effects of incorporating 11B4C interlayers into Fe/Si multilayers, with a focus on interface quality, reflectivity, polarization, and magnetic properties for polarized neutron optics. It is found that the…
State-of-the-art Ni/Ti supermirror neutron optics have limited reflected intensity and a restricted neutron energy range due to the interface width. Incorporating low-neutron-absorbing 11B4C enhances reflectivity and allows for thinner…
Atomic diffusion at nanometer length scale may differ significantly from bulk diffusion, and may sometimes even exhibit counterintuitive behavior. In the present work, taking Cu/Ni as a model system, a general phenomenon is reported which…
Low Energy Ion Scattering (LEIS) was employed to study the surface composition of thin films of Ru on B, C and B4C films at different stages of growth. Effects of surface segregation of C were observed. Previously unknown matrix effects…
This study investigates the effects of 11B4C co-sputtering on the structural and optical properties of Fe/Si stacked multilayers, with a focus on neutron supermirror applications. X-ray and neutron reflectivity techniques reveal that 11B4C…
Nanoscale diffusion at the interfaces in multilayers plays a vital role in controlling their physical properties for a variety of applications. In the present work depth-dependent interdiffusion in a Si/Fe/Si trilayer has been studied with…
Pd/Y multilayers are high reflectance mirrors designed to work in the 7.5-11 nm wavelength range. Samples, prepared by magnetron sputtering, are deposited with or without B4C barrier layers located at the interfaces of Pd and Y layers to…
The interaction of 32.5 and 6 nm ultrashort X-ray pulses with the solid materials B4C, SiC and Si is simulated with a non-local thermodynamic equilibrium (NLTE) radiation transfer code. We study the ionization dynamics as function of depth…
Magnetic hysteresis properties in Fe/Si multilayers have been studied as a function of the B4C content to control magnetization amplitude, coercivity, and hysteresis tilt, properties that are beneficial to tune for advancing applications in…
We report results of simultaneous x-ray reflectivity and grazing incidence x-ray fluorescence measurements in combination with x-ray standing wave assisted depth resolved near edge x-ray absorption measurements to reveal new insights on…
Quantitative ultrasound can be used to characterize the evolution of the bone-implant interface (BII), which is a complex system due to the implant surface roughness and to partial contact between bone and the implant. The aim of this study…
This study presents a comprehensive investigation of chemical, structural, and magnetic properties of Ti/Ni multilayer systems with period thicknesses of 4 nm and 10 nm. Particular attention was paid to the characterization of the…
A simple model to describe Mixed Ionic Electronic Conductors (MIEC) in terms of standard semiconductor physics is described. This model allows to understand defect equilibrium and charge transport at ideal heterojunctions between materials…
The structural interface properties of layered Pt/Ti/SiO2/Si electrodes have been investigated using high-resolution specular and diffuse x-ray reflectivity under grazing angles. Currently this multilayer system represents a technological…
We report a detailed study of surface and interface properties of pulsed-laser deposited NiMnSb films on Si (100) substrate as a function of film thickness. As the thickness of films is reduced below 35 nm formation of a porous layer is…
Interdiffusion phenomena between adjacent materials are highly prevalent in semiconductor device architectures and can present a major reliability challenge for the industry. To fully capture and better understand these phenomena,…
The role of interface states and dielectric mismatch is studied in ultrathin P-doped silicon-on-insulator (SOI) films with thickness of the device layer ($H_{SOI}$) varying from 30 to 8 nm and dopant concentration ($n_{D}$) ranging from…
Amorphous boron carbide (B4C) thin films are by far the most popular form for the neutron converting layers in the 10B-based neutron detectors, which are a rising trend in detector technologies in response to the increasing scarcity and…
After decades of research, superconductivity was finally found in nickel-based analogs of superconducting cuprates, with infinite-layer (IL) structure. These results are so far restricted to thin films in the case of IL-nickelates.…