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Bound states in the continuum (BICs) are a fascinating class of eigenstates that trap energy within the continuum, enabling breakthroughs in ultra-low-threshold lasing, high-Q sensing, and advanced wave-matter interactions. However, their…
To date, second-harmonic generation (SHG) at nanoscale has been concentrated on employing high-refractive-index nanostructures, owing to the strong field confinement at deep subwavelength scales based on optically resonant effects. However,…
The robust transport of edge modes is perhaps the most useful property of topological materials. The existence of edge modes is guaranteed by the bulk-edge correspondence, which states that the number of topological edge modes is determined…
An important challenge in the field of topological materials is to carefully disentangle the electronic transport contribution of the topological surface states from that of the bulk. For Bi$_2$Te$_3$ topological insulator samples, bulk…
High-order topological insulators (TIs) develop the conventional bulk-boundary correspondence theory and rise the interest in searching innovative topological materials. To realize a high-order TI with a wide passband of 1D and 2D…
We describe the influence of hard wall confinement and lateral dimension on the low temperature transport properties of long diffusive channels and ballistic crosses fabricated in an InSb/InxAl1-xSb heterostructure. Partially diffuse…
We study bound states embedded into the continuum of edge states in two-dimensional topological insulators. These states emerge in the presence of a short-range potential of a structural defect coupled to the boundary. In this case the edge…
Combining the ability to prepare high-quality, intrinsic Bi$_2$Te$_3$ topological insulator thin films of low carrier density with in-situ protective capping, we demonstrate a pronounced, gate-tunable change in transport properties of…
Transient reflectivity traces measured for nanometer-sized films of the topological insulator Bi2Se3 revealed GHz-range oscillations driven within the relaxation of hot carriers photoexcited with ultrashort laser pulses of 1.51 eV photon…
Higher-order topological phases have raised widespread interest in recent years with the occurrence of the topological boundary states of dimension two or more less than that of the system bulk. The higher-order topological states have been…
Several small-bandgap semiconductors are now known to have protected metallic surface states as a consequence of the topology of the bulk electron wavefunctions. The known "topological insulators" with this behavior include the important…
Compact, high-performance components in millimeter-wave (mmWave) communication systems demand new acoustic filter technology at increasingly higher frequencies. Among various promising mmWave platforms, first-order antisymmetric (A1) mode…
The bulk-boundary correspondence is a key concept in topological quantum materials. For instance, a quantum spin Hall insulator features a bulk insulating gap with gapless helical boundary states protected by the underlying Z2 topology.…
The recent discovery of topology-protected charge transport of ultimate thinness on surfaces of three-dimensional topological insulators (TIs) are breaking new ground in fundamental quantum science and transformative technology. Yet a…
In the flurry of experiments looking for topological insulator materials, it has been recently discovered that some bulk metals very close to topological insulator electronic states, support the same topological surface states that are the…
In conventional theories, topological band properties are intrinsic characteristics of the bulk material and do not depend on the choice of the reference frame. In this scenario, the principle of bulk-edge correspondence can be used to…
(Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ alloys are non-degenerate topological insulators (TIs) whose Dirac point (DP) can be tuned within the bulk bandgap by varying the composition, effectively reducing bulk conduction while allowing surface carrier…
With a large band gap and a single Dirac cone responsible for the topological surface states, Bi2Se3 is widely regarded as a prototypical 3D topological insulator. Further applications of the bulk material has, however, been hindered by…
We derived analytical results for the gapless edge states of two-dimensional topological insulators in the presence of electron-surface optical (SO) phonon interaction due to substrates. We followed an analytical algorithm, called…
We have investigated the transport properties of topological insulator Bi2Se3 thin films grown using magnetron sputtering with an emphasis on understanding the behavior as a function of thickness. We show that thickness has a strong…