Related papers: Hole Spin in Direct Bandgap Germanium-Tin Quantum …
Germanium (Ge) quantum wells are emerging as versatile platforms for quantum devices, supporting high-quality spin qubits and integration with superconducting leads. These applications benefit from strong intrinsic spin-orbit interaction…
Hole gases in planar germanium can have high mobilities in combination with strong spin-orbit interaction and electrically tunable g-factors, and are therefore emerging as a promising platform for creating hybrid…
Hole spins in silicon or germanium quantum dots have emerged as a compelling solid-state platform for scalable quantum processors. Besides relying on well-established manufacturing technologies, hole-spin qubits feature fast,…
Quantum computers require the systematic operation of qubits with high fidelity. For holes in germanium, the spin-orbit interaction allows for \textit{in situ} electric fast and high-fidelity qubit gates. However, the interaction also…
The electric dipole spin resonance (EDSR) combining strong spin-orbit coupling (SOC) and electric-dipole transitions facilitates fast spin control in a scalable way, which is the critical aspect of the rapid progress made recently in…
Hole spin qubits are frontrunner platforms for scalable quantum computers because of their large spin-orbit interaction which enables ultrafast all-electric qubit control at low power. The fastest spin qubits to date are defined in long…
The design of scalable quantum computers will benefit from predictive models for qubit performance that consider the design and layout of the qubit devices. This approach, has recently been adopted for superconducting qubits, but has…
This work investigates and compares the impact of strain on heavy hole (HH) spin qubits in SiGe/Ge and light hole (LH) spin qubits in GeSn/Ge heterostructures, focusing on energy states, g-factor, Rabi frequency, spin relaxation, and…
The intense simulation efforts on hole-spin qubits in germanium have so far focused primarily on singly occupied quantum dots. Here, we theoretically investigate three-hole qubits in germanium and demonstrate that their performance can…
Hole spins have gained considerable interest in the past few years due to their potential for fast electrically controlled qubits. Here, we study holes confined in Ge hut wires, a so far unexplored type of nanostructure. Low temperature…
The co-integration of spin, superconducting, and topological systems is emerging as an exciting pathway for scalable and high-fidelity quantum information technology. High-mobility planar germanium is a front-runner semiconductor for…
We investigate hole spin relaxation in the single- and multi-hole regime in a 2x2 germanium quantum dot array. We use radiofrequency (rf) charge sensing and observe Pauli Spin-Blockade (PSB) for every second interdot transition up to the…
Spin qubits defined by valence band hole states comprise an attractive candidate for quantum information processing due to their inherent coupling to electric fields enabling fast and scalable qubit control. In particular, heavy holes in…
Germanium-silicon-germanium (Ge/Si$_{x}$Ge$_{1-x}$) heterostructures have emerged as a promising platform for hole-spin quantum technologies and high-mobility electronics, where strain and quantum confinement strongly reshape the Ge valence…
Buried-channel semiconductor heterostructures are an archetype material platform to fabricate gated semiconductor quantum devices. Sharp confinement potential is obtained by positioning the channel near the surface, however nearby surface…
Hole spins confined in semiconductor quantum dot systems have gained considerable interest for their strong spin-orbit interactions (SOIs) and relatively weak hyperfine interactions. Here we experimentally demonstrate a tunable SOI in a…
Holes confined in quantum dots have gained considerable interest in the past few years due to their potential as spin qubits. Here we demonstrate double quantum dot devices in Ge hut wires. Low temperature transport measurements reveal…
Rare-earth nitrides, such as gadolinium nitride (GdN), have great potential for spintronic devices due to their unique magnetic and electronic properties. GdN has a large magnetic moment, low coercitivity and strong spin polarization…
Gate geometry and bias asymmetry can be used to engineer spin dynamics in gate-defined Ge hole quantum dots by reshaping the confinement potential and driving transitions between distinct confinement regimes. In this work, we show that…
Strong spin-orbit coupling and relatively weak hyperfine interactions make germanium hole spin qubits a promising candidate for semiconductor quantum processors. The two-dimensional hole gas structure of strained Ge quantum wells serves as…