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Multiple logic devices are presently under study within the Nanoelectronic Research Initiative (NRI) to carry the development of integrated circuits beyond the CMOS roadmap. Structure and operational principles of these devices are…

Mesoscale and Nanoscale Physics · Physics 2013-02-04 Dmitri E. Nikonov , Ian A. Young

Developing accurate and reliable Compute-In-Memory (CIM) architectures is becoming a key research focus to accelerate Artificial Intelligence (AI) tasks on hardware, particularly Deep Neural Networks (DNNs). In that regard, there has been…

Hardware Architecture · Computer Science 2026-04-15 Omar Numan , Gaurav Singh , Kazybek Adam , Jelin Leslin , Aleksi Korsman , Otto Simola , Marko Kosunen , Jussi Ryynänen , Martin Andraud

Over the past few years, several microring resonator (MRR)-based analog photonic architectures have been proposed to accelerate general matrix-matrix multiplications (GEMMs), which are found in abundance in deep learning workloads.These…

The combination of semiconducting properties and synthetically tunable chirality in chiral metal halide semiconductors (CMHS) offer a compelling platform for room temperature control over electronic spin properties, leveraging effects such…

We study the resistive switching (RS) mechanism as way to obtain multi-level memory cell (MLC) devices. In a MLC more than one bit of information can be stored in each cell. Here we identify one of the main conceptual difficulties that…

Reconfigurable intelligent surface (RIS)-aided rate-splitting multiple access (RSMA) systems have demonstrated remarkable potential in enhancing spectral efficiency. However, most existing works rely on ideal hardware, which is…

Information Theory · Computer Science 2026-03-20 Xuejun Cheng , Qian Zhang , Yunnuo Xu , Zheng Dong , Ju Liu , Bruno Clerckx

Controlled atomic scale fabrication of functional devices is one of the holy grails of nanotechnology. The most promising class of techniques that enable deterministic nanodevice fabrication are based on scanning probe patterning or surface…

The radiation response of a 0.25 um silicon-on-sapphire CMOS technology is characterized at the transistor and circuit levels utilizing both standard and enclosed layout devices. Device-level characterization showed threshold voltage change…

The geometrical and performance scaling of silicon CMOS integrated circuit technology over the past 50 years has enabled many affordable new products for business and consumer applications. Recognizing that Flash is approaching its ultimate…

Materials Science · Physics 2014-08-21 Franz Kreupl

A new model of a symmetric two-terminal non-volatile RRAM device based on Perovskite oxide thin film materials, specifically Pr1-xCaxMnO3 (PCMO), is proposed and analyzed. The model consists of two identical half-parts, which are completely…

Strongly Correlated Electrons · Physics 2015-06-25 X. Chen , J. Strozier , N. J. Wu , A. Ignatiev , Y. B. Nian

Embedding silicon nanoparticles in an intermetallic matrix is a promising strategy to produce remarkable bulk anode materials for lithium-ion (Li-ion) batteries with low potential, high electrochemical capacity and good cycling stability.…

Materials Science · Physics 2021-01-06 Tahar Azib , Claire Thaury , Fermin Cuevas , Eric Leroy , Christian Jordy , Nicolas Marx , Michel Latroche

Silicon nitride (SiN) has emerged as a promising platform for integrated nonlinear photonics because of its low propagation loss, wide transparency window, and CMOS compatibility. Nonlinear processes arising from photon-electron…

This paper presents an asymptotic analysis of Multiple-Input Multiple-Output (MIMO) systems assisted by a 1-bit Reconfigurable Intelligent Surface (RIS) under Ricean fading conditions. Using random matrix theory, we show that, in the…

Signal Processing · Electrical Eng. & Systems 2025-11-12 Panagiotis Gavriilidis , Kyriakos Stylianopoulos , George C. Alexandropoulos

Moore's law has long served the semiconductor industry as the driving force for producing ever-advancing electronics technologies. However, given the economic implications and technological challenges associated with the present…

Materials Science · Physics 2025-12-11 Andreas Tsiamis , Spyros Stathopoulos , Themis Prodromakis

The electromagnetic (EM) features of reconfigurable intelligent surfaces (RISs) fundamentally determine their operating principles and performance. Motivated by these considerations, we study a single-input single-output (SISO) system in…

Information Theory · Computer Science 2024-04-15 Nemanja Stefan Perović , Le-Nam Tran , Marco Di Renzo , Mark F. Flanagan

Superlattices may play an important role in next generation electronic and spintronic devices if the key-challenge of the reading and writing data can be solved. This challenge emerges from the coupling of low dimensional individual layers…

Mesoscale and Nanoscale Physics · Physics 2014-08-04 S. Narayana Jammalamadaka , Johan Vanacken , V. V. Moshchalkov

High-performance non-volatile resistive random access memories (ReRAM) and their small stimuli control are of immense interest for high-speed computation and big-data processing in the emergent Internet of Things (IOT) arena. Here, we…

Stacked intelligent metasurface (SIM) has emerged as a technology enabling wave domain beamforming through multiple stacked reconfigurable intelligent surfaces (RISs). SIM has been implemented so far with diagonal RIS (D-RIS), while SIM…

Information Theory · Computer Science 2024-05-14 Matteo Nerini , Bruno Clerckx

We present a compact on-chip resonator enhanced silicon-MSM photodetector in $850$ $nm$ wavelength band for communication and lab-on-chip bio-sensing applications. We report the highest responsivity of 0.81 A/W for a 5 $\mu m$ long device.…

Applied Physics · Physics 2020-12-02 Avijit Chatterjee , Saumitra Sam , Sujit Kumar Sikdar , Shankar Kumar Selvaraja

Being one of the strongest materials, ternary TiSiN exhibits a very interesting family of binary transition metal nitride and silicide systems. A novel technique to fabricate morphologically fascinating nano and micro structures of TiSiN is…