Related papers: Valley Gapless Semiconductor: Models and Applicati…
In a number of widely-studied materials, such as Si, AlAs, Bi, graphene, MoS2, and many transition metal dichalcogenide monolayers, electrons acquire an additional, spin-like degree of freedom at the degenerate conduction band minima, also…
Valleytronics is a rising topic to explore the emergent degree of freedom for charge carriers in energy band edges and has attracted a great interest due to many intriguing quantum phenomena and potential application in information…
Transition metal dichalcogenide semiconductors represent elementary components of layered heterostructures for emergent technologies beyond conventional opto-electronics. In their monolayer form they host electrons with quantized circular…
Advances of condensed matter physics in exploiting the spin degree of freedom of electrons led to the emergence of the field of spintronics, which envisions new and more efficient approaches to data transfer, computing, and storage [1-3].…
Electronic and spintronic devices rely on the fact that free charge carriers in solids carry electric charge and spin, respectively. There are, however, other properties of charge carriers that might be exploited in new families of devices.…
Two-dimensional (2D) ferrovalley semiconductor (FVSC) with spontaneous valley polarization offers an exciting material platform for probing Berry phase physics. How FVSC can be incorporated in valleytronic device applications, however,…
We introduce the concept of valley-layer coupling (VLC) in two-dimensional materials, where the low-energy electronic states in the emergent valleys have valley-contrasted layer polarization such that each state is spatially localized on…
Two-dimensional transition metal dichalcogenide (TMD) semiconductors provide a unique possibility to access the electronic valley degree of freedom using polarized light, opening the way to valley information transfer between distant…
Despite much anticipation of valleytronics as a candidate to replace the ageing CMOS-based information processing, its progress is severely hindered by the lack of practical ways to manipulate valley polarization all-electrically in an…
One of the key problems in valleytronics is to realize valley polarization. Ferrovalley (FV) semiconductor and half-valley-metal (HVM) have been proposed, which possess intrinsic spontaneous valley polarization. Here, we propose the concept…
Spin shuttling has crystalized as a powerful and promising tool for establishing intermediate-range connectivity in semiconductor spin-qubit devices. Although experimental demonstrations have performed exceptionally well on different…
The coupling between spin, charge, and lattice degrees of freedom plays an important role in a wide range of fundamental phenomena. Monolayer semiconducting transitional metal dichalcogenides have emerged as an outstanding platform for…
Valleytronics in 2D materials - primarily graphene and transition metal dichalcogenides is rooted in the existence of valley flavor but extends far out to the rich dimension of local physics, as reviewed, extensively studied and…
Inner edge state with spin and valley degrees of freedom is a promising candidate to design a dissipationless device due to the topological protection. The central challenge for the application of inner edge state is to generate and…
Dirac electrons in graphene have a valley degree of freedom that is being explored as a carrier of information. In that context of "valleytronics" one seeks to coherently manipulate the valley index. Here we show that reflection from a…
The valley degree of freedom in layered transition-metal dichalcogenides (MX2) provides the opportunity to extend functionalities of novel spintronics and valleytronics devices. Due to spin splitting induced by spin-orbital coupling (SOC),…
The generation of a fully valley-polarized current (FVPC) in bulk graphene is a fundamental goal in valleytronics. To this end, we investigate valley-dependent transport through a strained graphene modulated by a finite magnetic…
The valley degree of freedom of electrons in materials promises routes toward energy-efficient information storage with enticing prospects towards quantum information processing. Current challenges in utilizing valley polarization are…
Valleytronics rooted in the valley degree of freedom is of both theoretical and technological importance as it offers additional opportunities for information storage and electronic, magnetic and optical switches. In analogy to…
Spintronics, which aims at exploiting the spin degree of freedom of carriers inside electronic devices, has a huge potential for quantum computation and dissipationless interconnects. Ideally, spin currents in spintronic devices should be…