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The nodal-line semimetals have attracted immense interest due to the unique electronic structures such as the linear dispersion and the vanishing density of states as the Fermi energy approaching the nodes. Here, we report…
In a wide variety of natural and laboratory magnetized plasmas, filaments appear as a result of interchange instability. These convective structures substantially enhance transport in the direction perpendicular to the magnetic field.…
The electrical properties and performance characteristics of niobium dioxide (NbO$_\mathrm{2}$)-based memristive devices are examined at cryogenic temperatures. Sub-stoichiometric Nb$_\mathrm{2}$O$_\mathrm{5}$ was deposited via magnetron…
Magnetization, electrical resistivity and specific heat measurements were performed on high-quality single crystalline SmTi$_2$Al$_{20}$ (residual resistivity ratio $\sim$ 40) grown by Al self-flux method. A Kondo-like $\log T$ dependence…
We report a study of the low-temperature heat transport in the quasi-one-dimensional S = 1/2 alternating antiferromagnetic-ferromagnetic chain compound (CH_{3})_{2}NH_{2}CuCl_{3}. Both the temperature and magnetic-field dependencies of…
We report a super-insulating behavior, in a device having granular Pb film on back-gated few-layer $\mathrm{MoS_2}$, below an onset temperature same as the critical temperature $T_{\rm C}\approx7$ K of bulk Pb. Below $T_{\rm C}$, the…
Phase change materials (PCMs) are well-known for their reversible and rapid switching between crystalline and amorphous phases through thermal excitations mediated by strong electrical or laser pulses. This crystal-to-amorphous transition…
Recent cold atom experiments have observed bad and strange metal behaviors in strongly-interacting Fermi-Hubbard systems. Motivated by these results, we calculate the thermoelectric transport properties of a 2D Fermi-Hubbard system in the…
The filamentation instability (FI) of counter-propagating beams of electrons is modelled with a particle-in-cell simulation in one spatial dimension and with a high statistical plasma representation. The simulation direction is orthogonal…
We have investigated metallic break junctions of the heavy-fermion compound UPd2Al3 at low temperatures between 0.1K and 9K and in magnetic fields up to 8T. Both the current-voltage I(V) characteristics and the dV/dI (V) spectra clearly…
In this work we carry out quantitative measurements of particle and heat transport associated to SOL filaments in a tokamak, and relate density shoulder formation to the advection of energy in the far SOL. For the first time, this attempt…
BiFeO3 thin films are deposited on FTO coated glass substrates using a simple sol-gel deposition technique, limiting thickness about 70 nm and Ag/BiFeO3/FTO RRAM devices are prepared. The devices showed low-voltage bipolar switching with…
We report on an artificial synapse, an organic synapse-transistor (synapstor) working at 1 volt and with a typical response time in the range 100-200 ms. This device (also called NOMFET, Nanoparticle Organic Memory Field Effect Transistor)…
We have measured the conductivity of high-mobility (001) Si metal-oxide-semiconductor field effect transistors (MOSFETs) over wide ranges of electron densities n=(1.8-15)x10^11cm^2, temperatures T=30mK-4.2K, and in-plane magnetic fields…
In a high mobility two-dimensional electron system in Si, near the critical density, $n_c=0.32\times10^{11}$cm$^{-2}$, of the apparent metal-to-insulator transition, the conductivity displays a linear temperature ($T$) dependence around the…
The resistivity of ultra-clean suspended graphene is strongly temperature dependent for 5K<T<240K. At T~5K transport is near-ballistic in a device of ~2um dimension and a mobility ~170,000 cm^2/Vs. At large carrier density, n>0.5*10^11…
The self-organized dopant percolative filamentary model, entirely orbital in character (no spins), is strongly influenced by background (in)homogeneities. In the high temperature superconductive (HTSC) cuprates, pseudogap regions produce…
We report inelastic light scattering from underdamped plasmons in azetidinium lead bromide (AzPbBr3). The plasmons are very strongly temperature dependent and serve as a soft mode for the semiconductor-insulator phase transition near TC…
The electrical transport properties of amorphous Bi films prepared by sequential quench deposition have been studied in situ. A superconductor-insulator (S-I) transition was observed as the film was made increasingly thicker, consistent…
In this work we demonstrate a new Field Effect Transistor device concept based on hydrogen-terminated diamond (H-diamond) that operates in an Accumulation Channel rather than Transfer Doping regime. Our FET devices demonstrate both extreme…