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The two-dimensional (2D) insulating material hexagonal boron nitride (h BN) has attracted much attention as the active medium in memristive devices due to its favorable physical properties, among others, a wide bandgap that enables a large…
Transitions to immeasurably small electrical resistance in thin films of Ag/Au nanostructure-based films have generated significant interest because such transitions can occur even at ambient temperature and pressure. While the zero-bias…
The features of electric transport in the powder samples consisting of the nanosize 2D-MoS2 flakes with different number of layers have been studied under the conditions of uniaxial pressure. There have been measured current-voltage…
Polyvinyl-pyrrolidone (PVP) loaded with different fractions of dispersed nano-graphene platelets (NGP) were studied by Broadband Dielectric Spectroscopy in the frequency range from 1 mHz to 1 MHz. Complex permittivity and dynamic ac…
We consider a simple spin-membrane model for rippling in graphene. The model exhibits transitions from a flat but rippled membrane to a buckled one. At high temperature the transition is second order but it is first order at low temperature…
Electroforming is used to initiate the memristive response in metal/oxide/metal devices by creating a filamentary conduction path in the oxide film. Here we use a simple photoresist-based detection technique to map the spatial distribution…
Resistive switching in amorphous silicon carbide (a-SiC) films deposited by a single composite target magnetron sputtering process is reported. Switching performance as a function of thickness of the films (50, 100 and 300 nm) as well as…
We report experiment and theory on an ambipolar gate-controlled Si-vacuum field effect transistor (FET) where we study electron and hole (low-temperature 2D) transport in the same device simply by changing the external gate voltage to tune…
We present a multiscale simulation framework to compute the current vs. voltage (I-V ) characteristics of metal/oxide/metal structures building the core of conductive bridging random access memory (CBRAM) cells and to shed light on their…
In this work, we observe the rigidity percolation phenomena in a fast ion conducting, conditional glass forming system (AgI)75-x-(Ag2O)25-(MoO3)x. To find out where, why and how the rigidity percolation phenomenon occurs within the range of…
We report on local probe measurements of current-voltage and electrostatic force-voltage characteristics of electric-field-induced insulator to metal transition in VO2 thin film. In conducting AFM mode, switching from the insulating to…
Memristive devices, whose resistance can be controlled by applying a voltage and further retained, are attractive as possible circuit elements for neuromorphic computing. This new type of devices poses a number of both technological and…
The electronic and vibrational properties of 2D materials are dramatically altered by the formation of a moir\'e superlattice. The lowest-energy phonon modes of the superlattice are two acoustic branches (called phasons) that describe the…
An electric current flowing in a ferromagnetic metal carries spin angular momentum, i.e. it is spin-polarized. Here, we measure the spin-wave Doppler shift induced by the transfer of angular momentum from the diffusive spin-polarized…
We study the charge and spin transport under high electric field (up to several kV/cm) on the surface of topological insulator Bi$_2$Se$_3$, where the electron-surface optical phonon scattering dominates except at very low temperature. Due…
The low-temperature transport properties of a molecule are studied in the field-effect transitor geometry. The molecule has an internal mechanical mode that modulates its electronic levels and renormalizes both the interactions and the…
The transition voltage of an abrupt metal-insulator transition (MIT), observed by applying an electric field to two-terminal devices fabricated on a Mott insulator VO_2 film, decreases with increasing temperature up to 334K. The abrupt…
We calculate the temperature dependence of the transport properties of heavy-fermion systems such as resistivity, optical conductivity, thermoelectric power, the electronic part of the thermal conductivity, and the "figure of merit." The…
We report on the fabrication of field-effect transistors based on single and bilayers of the semiconductor WS2 and the investigation of their electronic transport properties. We find that the doping level strongly depends on the device…
Cryogenic photon sensing for high-energy physics motivates photosensor technologies that combine large-area scalability with internal gain and stable operation at low temperature. Amorphous selenium is a promising photoconductor, yet its…