Related papers: Spin-reorientation driven topological Hall effect …
Topologically protected magnetic structures provide a robust platform for low power consumption devices for computation and data storage. Examples of these structures are skyrmions, chiral domain walls, and spin spirals. Here we use…
Antiferromagnetic (AFM) van der Waals (vdW) materials provide a novel platform for synthetic AFM spintronics, in which the spin-related functionalities are derived from manipulating spin configurations between the layers. Metallic vdW…
The ability to engineer new states of matter and to control their electronic and spintronic properties by electric fields is at the heart of the modern information technology and driving force behind recent advances in van der Waals (vdW)…
Electrical resistivity, magnetoresistivity, and the Hall effect have been studied in a topological semimetal WTe2 single crystal in the temperature range from 12 to 200 K under magnetic fields up to 9 T. It has been found that quadratic…
We investigate the temperature dependence of the intrinsic anomalous Hall conductivity in Fe$_3$Ge, which is a ferromagnetic topological metal. We observe a significant anisotropy in the anomalous Hall conductivity between in-plane and…
Current-induced control of magnetization in ferromagnets using spin-orbit torque (SOT) has drawn attention as a new mechanism for fast and energy efficient magnetic memory devices. Energy-efficient spintronic devices require a spin-current…
Effectively tuning magnetic state by using current is essential for novel spintronic devices. Magnetic van der Waals (vdW) materials have shown superior properties for the applications of magnetic information storage based on the efficient…
Metallic amorphous ferrimagnets of 3d transition metals (TM) and rare earths (RE) with 4f electrons exhibit rich magneto transport behavior due to the interplay between the 3d and 4f magnetic sublattices and their interaction with mobile…
Materials that intrinsically possess both magnetism and topological states represent a key frontier of quantum materials research. Recently, Mn2(Bi/Sb)2Te5 has emerged as a promising candidate for hosting topological surface states coupled…
We report the doping effects of cobalt on van der Waals (vdW) magnet Fe$_5$GeTe$_2$. A series of (Fe$_{1-x}$Co$_x$)$_5$GeTe$_2$ (0$\leq$x$\leq$0.44) single crystals have been successfully grown, their structural, magnetic and transport…
While in most ferro or antiferromagnetic materials there is a unique crystallographic direction, including crystallographically equivalent directions, in which the moments like to point due to spin-orbit coupling, in some, the direction of…
The weak antilocalization (WAL) effect is known as a quantum correction to the classical conductivity, which never appeared in two-dimensional magnets. In this work, we reported the observation of a WAL effect in the van der Waals…
The exceptional properties of two-dimensional (2D) magnet materials present a novel approach to fabricate functional magnetic tunnel junctions (MTJ) by constructing full van der Waals (vdW) heterostructures with atomically sharp and clean…
The magnetic tunnel junctions (MTJ) based on van der Waals (vdW) materials possess atomically smooth interfaces with minimal element intermixing. This characteristic ensures that spin polarization is well maintained during transport,…
The search for exotic spin configurations and related novel transport properties continues to be fueled by the promise of new electronic states and outstanding candidate components for spintronic applications. In layered…
Van der Waals (vdW) magnetic heterostructures offer a versatile platform for engineering interfacial spin interactions with atomic precision, enabling nontrivial spin textures and dynamic behaviors. In this work, we report robust asymmetric…
Thermal transport is a pivotal probe for studying low-energy, charge-neutral quasi-particles in insulating magnets. In this Letter, we report an observation of large magneto-thermal conductivity and thermal Hall effect (THE) in a van der…
Spin orbit torque (SOT) has become a promising approach to efficiently manipulate the magnetization switching in spintronic devices. As a main factor to impact the device performance, the high quality interface is essentially desired, which…
Exchange bias effect plays a crucial role in modern magnetic memory technology. Recently, van der Waals magnetic materials have emerged and shown potential in spintronic devices at atomic scale. Owing to their tunable physical properties…
The determination of Lande's g-factor and the damping constant is central to extracting crucial information about the spin-spin and spin-orbit interactions in magnetically ordered systems. In insulating compounds based on 3d elements, the…