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ZnO/GaN alloys exhibit exceptional photocatalyst applications owing to the flexibly tunable band gaps that cover a wide range of the solar spectrum, and thus have attracted extensive attentions over the past few years. In this study,…

Materials Science · Physics 2020-09-04 Yang Zhang , Zhi-Feng Wu , Peng-Fei Gao , Dang-Qi Fang , Sheng-Li Zhang

The spectrum of two-dimensional (2D) materials beyond graphene offers a remarkable platform to study new phenomena in condensed matter physics. Among these materials, layered hexagonal boron nitride (hBN), with its wide bandgap energy…

We theoretically investigate the electronic structures of moir\'{e} superlattices arising in monolayer / bilayer graphene stacked on hexagonal boron nitride (hBN) in presence and absence of magnetic field. We develop an effective continuum…

Mesoscale and Nanoscale Physics · Physics 2014-10-10 Pilkyung Moon , Mikito Koshino

The interlayer coupling of twisted bilayer graphene could markedly affect its electronic band structure. A current challenge required to overcome in experiment is how to precisely control the coupling and therefore tune the electronic…

Mesoscale and Nanoscale Physics · Physics 2012-08-07 Lan Meng , Wei Yan , Zhao-Dong Chu , Yanfeng Zhang , Lei Feng , Rui-Fen Dou , Jia-Cai Nie , Lin He

Sliding ferroelectricity is emerging as a distinct and promising mechanism for realizing ferroelectricity in low-dimensional systems, offering new design principles beyond the conventional ferroelectric mechanism. Further, the coexistence…

Materials Science · Physics 2025-12-23 Akshay Mahajan , Awadhesh Narayan

Using an external electric field, one can modulate the bandgap of Bernal stacked bilayer graphene by breaking A-~B symmetry. We analyze strain effects on the bilayer graphene using the extended Huckel theory and find that reduced interlayer…

Mesoscale and Nanoscale Physics · Physics 2009-02-03 Hassan Raza , Edwin C. Kan

By interlayer sliding in van der Waals (vdW) materials, the switching electric polarization of ultrathin ferroelectric materials leads to the widely studied slidetronics. In this work, we report that such sliding can further tailor…

Materials Science · Physics 2023-10-18 Linfeng Yu , Chen Shen , Guangzhao Qin , Hongbin Zhang

Despite its potential in the fields of optoelectronics and topological insulators, experimental electronic band structure studies of Bi-doped GaAs are scarce. The reason is the complexity of growth which tends to leave bulk and in…

We present a first-principles study of the electronic properties of silicon clathrate nanowires intercalated with various types of alkali or alkaline-earth atoms. We find that the band structure of the nanowires can be tuned by varying the…

Materials Science · Physics 2009-11-11 S. Sirichantaropass , V. M. García-Suárez , C. J. Lambert

Predictive first-principles calculations suggest graphitic-like GaN to be theoretically possible. Thus far, it has not been experimentally reported. We report on GaN monolayer in a buckled geometry obtained in confinement at graphene/SiC…

The electronic and optical properties of graphene nanoribbons under uniaxial periodic strain have been explored using various nearest-neighbor hopping patterns. It is found that by properly selecting hopping patterns, momentum-resolved gaps…

Mesoscale and Nanoscale Physics · Physics 2024-11-05 Chunwen Zhang , W. X. Yan

We perform a systematic theoretical analysis of the nature and importance of alloy disorder effects on the electronic and optical properties of GaN$_{y}$As$_{1-x-y}$Bi$_{x}$ alloys and quantum wells (QWs), using large-scale atomistic…

Materials Science · Physics 2018-10-17 Muhammad Usman , Christopher A. Broderick , Eoin P. O'Reilly

This work studies the effect of four different types of buffer layers on the structural and optical properties of InGaN layers grown on Si(111) substrates and their correlation with electrical characteristics. The vertical electrical…

In an ideal InAs/GaSb bilayer of appropriate dimension in-plane electron and hole bands overlap and hybridize, and a topologically non-trivial, or quantum spin Hall (QSH) insulator, phase is predicted to exist. The in-plane dispersion's…

In this study, we highlight the potential of strain engineering in graphene/hBN (hexagonal Boron nitride) 2D heterostructures, enabling their use as wide-range light absorbers with significant implications for optoelectronic applications.…

Mesoscale and Nanoscale Physics · Physics 2024-07-17 Priyanka Sinha , Prasanta K. Panigrahi , Bheemalingam Chittari

The electronic properties of graphene may be changed from semimetallic to semiconducting by introducing perforations (antidots) in a periodic pattern. The properties of such graphene antidot lattices (GALs) have previously been studied…

Mesoscale and Nanoscale Physics · Physics 2014-09-12 S. J. Brun , M. R. Thomsen , T. G. Pedersen

We study ballistic transport in bilayer graphene junctions and show how electrostatic gating, interlayer bias, and homogeneous strain provide complementary control over electron transmission. In the absence of strain, transport is governed…

Mesoscale and Nanoscale Physics · Physics 2026-04-10 Dan-Na Liu , Jun Zheng , Pierre A. Pantaleon

Controlling the size and shape of nanopores in two-dimensional materials is a key challenge in applications such as DNA sequencing, sieving, and quantum emission in artificial atoms. We here investigate experimentally and theoretically…

Bilayer graphene nanoribbon with zigzag edge is investigated with the tight binding model. Two stacking structures, alpha and beta, are considered. The band splitting is seen in the alpha structure, while the splitting in the wave number…

Mesoscale and Nanoscale Physics · Physics 2012-03-13 Kikuo Harigaya , Hiroshi Imamura

Understanding the atomic-scale mechanisms governing metal-mediated nucleation and growth of gallium nitride (GaN) and related alloys is critical for tailoring their structural and functional properties in advanced electronic,…