Related papers: Ordered InAs QDs using prepatterned substrates by …
Strain-free GaAs/AlGaAs semiconductor quantum dots (QDs) grown by droplet etching and nanohole infilling (DENI) are highly promising candidates for the on-demand generation of indistinguishable and entangled photon sources. The…
Core-shell GaAs-based nanowires monolithically integrated on Si constitute a promising class of nanostructures that could enable light emitters for fast inter- and intrachip optical connections. We introduce and fabricate a novel coaxial…
We report on the optical properties of a newly developed site-controlled InGaAs Dots in GaAs barriers grown in pre-patterned pyramidal recesses by metalorganic vapour phase epitaxy. The inhomogeneous broadening of excitonic emission from an…
The capability to embed self-assembled quantum dots (QDs) at predefined positions in nanophotonic structures is key to the development of complex quantum photonic architectures. Here, we demonstrate that QDs can be deterministically…
Dilute arrays of GaAs/AlGaAs modulation-doped quantum dots (QDs) fabricated by electron-beam lithography and low impact reactive-ion etching exhibit highly homogeneous luminescence. Single quantum dots display spectral emission with peak…
InGaAs Quantum Dots embedded in GaAs barriers, grown in inverted tetrahedral recesses of 7 {\mu}m edge, have showed interesting characteristics in terms of uniformity and spectral narrowness of the emission. In this paper we present a study…
Self-assembled InAs/GaAs quantum dots (QDs) have properties highly valuable for developing various optoelectronic devices such as QD lasers and single photon sources. The applications strongly rely on the density and quality of these dots,…
III-V semiconductor quantum dots (QDs) are near-ideal and versatile single-photon sources. Because of the capacity for monolithic integration with photonic structures as well as optoelectronic and optomechanical systems, they are proving…
Self-assembled, epitaxially-grown InAs/GaAs quantum dots are promising semiconductor quantum emitters that can be integrated on a chip for a variety of photonic quantum information science applications. However, self-assembled growth…
We present a detailed experimental optical study supported by theoretical modeling of InAs quantum dots (QDs) embedded in an InAlGaAs barrier lattice-matched to InP(001) grown with the use of a ripening step in molecular beam epitaxy. The…
We report on a combined photoluminescence imaging and atomic force microscopy study of single, isolated self-assembled InAs quantum dots (density <0.01 um^(-2) capped by a 95 nm GaAs layer, and emitting around 950 nm. By combining optical…
In this paper we report on the optical properties of site controlled InGaAs dots with GaAs barriers grown in pyramidal recesses by metalorganic vapour phase epitaxy. The inhomogeneous broadening of excitonic emission from an ensemble of…
We demonstrate a new quantum-confined semiconductor material based on GaSb quantum dots (QDs) embedded in single-crystalline AlGaSb matrix by filling droplet-etched nanoholes. The droplet-mediated growth mechanism allows formation of low QD…
Cryogenic scanning tunneling microscopy was employed in combination with density-functional theory calculations to explore quantum dots made of In adatoms on the InAs(110) surface. Each adatom adsorbs at a surface site coordinated by one…
Quantum networks based on InGaAs quantum dots embedded in photonic crystal devices rely on QDs being in resonance with each other and with the cavities they are embedded in. We developed a new technique based on temperature tuning to…
Self-assembled InAs quantum dots (QDs), which have long hole-spin coherence times and are amenable to optical control schemes, have long been explored as building blocks for qubit architectures. One such design consists of vertically…
We investigate the optical properties of InAs quantum dots grown by molecular beam epitaxy on GaAs(110) using Bi as a surfactant. The quantum dots are synthesized on planar GaAs(110) substrates as well as on the {110} sidewall facets of…
Surface energies play a dominant role in the self-assembly of three dimensional (3D) nanostructures. In this letter, we show that using surfactants to modify surface energies can provide a means to externally control nanostructure…
Cross-sectional scanning tunneling microscopy (X-STM) was employed to characterize the InAs submonolayer quantum dots (SMLQDs) grown on top of a Si-doped GaAs(001) substrate in the presence of (2X4) and c(4X4) surface reconstructions.…
We demonstrate nearly-spherical, strain-free, self-assembled Ge quantum dots (QDs) fully encapsulated by AlAs, grown on (100) GaAs by molecular beam epitaxy (MBE). The QDs were formed without a wetting layer using a high temperature,…