Related papers: Structural and optical changes induced by incorpor…
Understanding the carrier dynamics of nanostructures is the key for development and optimization of novel semiconductor nano-devices. Here, we study the optical properties and carrier dynamics of (InGa)(AsSb)/GaAs/GaP quantum dots (QDs) by…
Dilute concentrations of antimony (Sb) incorporation into GaN induce strong band-gap bowing and tunable room-temperature photoluminescence from the UV to the green spectral regions. However, the atomistic details of the incorporation of Sb…
We study (In,Ga)(As,Sb)/GaAs quantum dots embedded in a GaP (100) matrix, which are overgrown by a thin GaSb capping layer with variable thickness. Quantum dot samples are studied by temperature-dependent photoluminescence, and we observe…
Bulk samples of $(Sn_{1-x}Sb_{x}O_{2-\delta})$ with x = 0.00, 0.10, 0.20, 0.30 are synthesized by solid-state reaction route. Samples were characterized by X-ray powder diffraction (XRD), scanning electron microscopy (SEM), transmission…
InGaN is an ideal alloy system for optoelectronic devices due its tunable band gap. Yet high-quality InGaN requires high In concentration, which is a challenging issue that limits its use in green-light LEDs and other devices. In this…
Antimony (Sb), an element with strong spin-orbit coupling, is predicted to undergo a topological phase transition from a topological semimetal to a topological insulator as its dimensionality approaches the two-dimensional limit, driven by…
The optical response of (InGa)(AsSb)/GaAs quantum dots (QDs) grown on GaP (001) substrates is studied by means of excitation and temperature-dependent photoluminescence (PL), and it is related to their complex electronic structure. Such QDs…
The electronic structure of InAs quantum dots covered with the GaAs(1-y)Sb(y) strain reducing layer has been studied using the k.p theory. We explain previous experimental observations of the red shift of the photoluminescence emission with…
We describe the optical emission and the carrier dynamics of an ensemble of self-assembled GaAs quantum dots embedded in GaP(001). The QD formation is driven by the 3.6 % lattice mismatch between GaAs and GaP in Stranski-Krastanow mode…
We report a correlative microscopy study of a sample containing three stacks of InGaN/GaN quantum dots (QDs) grown at different substrate temperature, each stack consisting of 3 layers of QDs. Decreasing the substrate temperature along the…
An experimental study of optical phonon modes, both normal and interface (IF) phonons, in bilayer strain-coupled InAs/GaAs_(1-x)Sb_x quantum dot heterostructures has been presented by means of low-temperature polarized Raman scattering. The…
We analyse the optical properties of InAs$_{1-x}$Sb$_{x}$/Al$_{y}$In$_{1-y}$As quantum wells (QWs) grown by molecular beam epitaxy on relaxed Al$_{y}$In$_{1-y}$As metamorphic buffer layers (MBLs) using GaAs substrates. The use of…
We report the antimony (Sb) doping effect in a prototype system of iron-based supercon-ductors LaFeAsO1-yFy (y=0, 0.1, 0.15). X-ray powder diffraction indicates that the lattice pa-rameters increase with Sb content within the doping limit.…
We report on a combined photoluminescence imaging and atomic force microscopy study of single, isolated self-assembled InAs quantum dots (density <0.01 um^(-2) capped by a 95 nm GaAs layer, and emitting around 950 nm. By combining optical…
The influence of growth regimes of the silicon capping layer on the optical properties of heterostructures with submonolayer InAs quantum dots embedded in a silicon matrix has been studied. The photoluminescence signal at 1650 nm from…
We have studied theoretically the type-II GaAsSb capped InAs quantum dots for two structures differing in the composition of the capping layer, being either (i) constant or (ii) with Sb accumulation above the apex of the dot. We have found…
We demonstrate the coupling of PbS quantum dot emission to photonic crystal cavities at room temperature. The cavities are defined in 33% Al, AlGaAs membranes on top of oxidized AlAs. Quantum dots were dissolved in Poly-methyl-methacrylate…
Single self-assembled InAs/GaAs quantum dots are a promising solid-state quantum technology, with which vacuum Rabi splitting, single-photon-level nonlinearities, and bright, pure, and indistinguishable single-photon generation having been…
Solid-state single-photon emitters are key components for integrated quantum photonic devices. However, they can suffer from poor extraction efficiencies, caused by the large refractive index contrast between the bulk material they are…
We demonstrate nanohole formation in AlGaSb by Ga droplet etching within a temperature range from 270{\deg}C to 500{\deg}C, allowing a wide range of tunability of the nanohole density. By leveraging the low vapor pressure of Sb, we can…