Related papers: Quantum anomalous Hall effect for metrology
We propose a new pathway to the quantized anomalous Hall effect (QAHE) by coupling an altermagnet to a topological crystalline insulator (TCI). The former gaps the topological surface states of the TCI, thereby realizing the QAHE in a…
The Berry curvature in magnetic systems is attracting interest due to the potential tunability of topological features via the magnetic structure. $f$-electrons, with their large spin-orbit coupling, abundance of non-collinear magnetic…
The quantum anomalous Hall effect is a intriguing topological nontrivial phase arising from spontaneous magnetization and spin-orbit coupling. However, the tremendously harsh realizing requirements of the quantum anomalous Hall effects in…
The quantum anomalous Hall (QAH) effect is conventionally understood to exist only in Chern insulators, while a recent study has shown that ferromagnetic metals can also host the QAH effect. Between insulators and metals, we demonstrate…
We theoretically demonstrate that the in-plane magnetization induced quantum anomalous Hall effect (QAHE) can be realized in atomic crystal layers of group-V elements with buckled honeycomb lattice. We first construct a general…
Intrinsic magnetic topological insulators offer low disorder and large magnetic bandgaps for robust magnetic topological phases operating at higher temperatures. By controlling the layer thickness, emergent phenomena such as the Quantum…
The realization of fractional Chern insulators in moir\'e materials has sparked the search for further novel phases of matter in this platform. In particular, recent works have demonstrated the possibility of realizing quantum anomalous…
The interplay between quantum geometry and magnetic order offers a novel strategy for designing next-generation nanodevices. Here, we demonstrate that interlayer magnetic coupling in two-dimensional (2D) CoPSe3 bilayers enables precise…
Quantum anomalous Hall (QAH) insulators transport charge without resistance along topologically protected chiral one-dimensional edge states. Yet, in magnetic topological insulators (MTI) to date, topological protection is far from robust,…
The quantum anomalous Hall (QAH) effect have been experimentally observed in magnetically-doped topological insulators. However, the QAH effect only at extremely low temperatures due to the weak magnetic coupling, small band gap and low…
Magnetically doped topological insulators enable the quantum anomalous Hall effect (QAHE) which provides quantized edge states for lossless charge transport applications. The edge states are hosted by a magnetic energy gap at the Dirac…
The anomalous Hall effect (AHE) is a topology-related transport phenomenon being of potential interest in spintronics, because this effect enables the efficient probe of magnetic orders (i.e., data readout in memory devices). It is well…
While altermagnetic materials are characterized by a vanishing net magnetic moment, their symmetry in principle allows for the existence of an anomalous Hall effect (AHE). Here we introduce a model with altermagnetism in which the emergence…
Large intrinsic anomalous Hall effect (AHE) due to the Berry curvature in magnetic topological semimetals is attracting enormous interest due to its fundamental importance and technological relevance. Mechanisms resulting in large intrinsic…
We report a proximity-driven large anomalous Hall effect in all-telluride heterostructures consisting of ferromagnetic insulator Cr2Ge2Te6 and topological insulator (Bi,Sb)2Te3. Despite small magnetization in the (Bi,Sb)2Te3 layer, the…
Ferroelectricity, anti-ferromagnetism (AFM) and quantum anomalous Hall effect (QAHE) are three fundamental phenomena in the field of condensed matter physics, which could enable the realization of novel devices and thus attracts great…
Recently, antiferromagnetic (AF) materials have attracted rapid attention, because they are considered as outstanding candidates to replace the widely used ferromagnets in the next generation of spintronics. We propose a magnetoresistance…
Quantum anomalous Hall effect (QAH) is induced by substitution of a certain portion, x, of Bi atoms in a BiTe-based insulating parent compound by magnetic ions (Cr or V). We find the density of in-gap states, N(E), emerging as a result of…
A novel topological insulator with tunable edge states, called quantum spin-quantum anomalous Hall (QSQAH) insulator, is predicted in a heterostructure of a hydrogenated Sb (SbH) monolayer on a LaFeO3 substrate by using ab initio methods.…
The topological magnetoelectric effect (TME) in three-dimensional topological insulators (TIs), described by $\Delta P = \frac{e^2}{2h} N_{\rm Ch}^{(2)} \Delta B$, serves as a condensed-matter realization of the four-dimensional quantum…