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The in-plane electron mobility has been calculated in InAs/GaSb type-II superlattices at low temperatures. The interface roughness scattering and ionized impurity scattering are investigated as the dominant scattering mechanisms in limiting…
Built-in electric fields across heterojunctions between semiconducting materials underpin the functionality of modern device technologies. Heterojunctions between semiconductors and epitaxially grown crystalline oxides provide a rich…
The quasi-two-dimensional electron gas found at the LaAlO3/SrTiO3 interface offers exciting new functionalities, such as tunable superconductivity, and has been proposed as a new nanoelectronics fabrication platform. Here we lay out a new…
The LaAlO3/KTaO3 system serves as a prototype to study the electronic properties that emerge as a result of spin-orbit coupling. In this article, we have used first-principles calculations to systematically study two types of defect-free (0…
Employing the spin degree of freedom of charge carriers offers the possibility to extend the functionality of conventional electronic devices, while colloidal chemistry can be used to synthesize inexpensive and tuneable nanomaterials. In…
The electronic and optical properties of spherical nanoheterostructures are studied within the semi-empirical $sp^{3}s^{*}$ tight-binding model including the spin-orbit interaction. We use a symmetry-based approach previously applied to…
Antiferromagnetic spintronics, a promising technology for ultra-fast electronic devices, faces several challenges, including the lack of materials simultaneously hosting robust antiferromagnetism and adequate Rashba-like interaction. We…
Identifying materials hosting an excitonic insulator ground state has been one of the major pursuits in condensed matter physics in recent years. Promising candidates in transition metal chalcogenide compounds (TMC), including…
We study the influence of spin-orbit interactions on quasiparticle dispersions in two-dimensional electron and heavy-hole liquids in III-V semiconductors. To obtain closed-form analytical results, we restrict ourselves to spin-orbit…
Measuring terahertz (THz) conductivity on an ultrafast time scale is an excellent way to observe charge-carrier dynamics in semiconductors as a function of time after photoexcitation. However, a conductivity measurement alone cannot…
Electronic correlations were long suggested not only to be responsible for the complexity of many novel materials, but also to form essential prerequisites for their intriguing properties. Electronic behavior of iron-based superconductors…
In past few decades, Rashba spin-orbit coupling (SOC) has been successfully employed for the emergence of exotic phenomena at the quantum oxide interfaces. In these systems, the combined effect of charge transfer, broken symmetries and SOC…
Exploiting inversion symmetry breaking (ISB) in systems with strong spin-orbit coupling promises control of spin through electric fields - crucial to achieve miniaturization in spintronic devices. Delivering on this promise requires a…
Optical properties in van der Waals heterostructures based on monolayer transition-metal dichalcogenides (TMDs), are often dominated by excitonic transitions. While intrinsic spin-orbit coupling (SOC) and an isotropic band structure are…
In this paper we describe an ultrafast scanning electron microscope setup developed for the research of inelastic scattering of electrons at optical near-fields of periodic dielectric nanostructures. Electron emission from the Schottky…
Semiconductor heterojunctions have gained significant attention for efficient optoelectronic devices owing to their unique interfaces and synergistic effects. Interaction between charge carriers with the heterojunction plays a crucial role…
Rashba-like spin-orbit interaction at oxide heterostructures emerges as a much sought-after feature in the context of oxide spintronics and spin-orbitronics. KTaO$_3$ (KTO) is one of the best substrates available for the purpose, owing to…
By combining an atomistic valence-force field approach and calculations based on the effective-mass approximation we investigate the influence of strain effects on the band alignment and general excitonic properties of core/shell CdSe/CdS…
We investigate the two-dimensional (2D) highly spin-polarized electron accumulation layers commonly appearing near the surface of n-type polar semiconductors BiTeX (X = I, Br, and Cl) by angular-resolved photoemission spectroscopy. Due to…
We report the direct observation of interband spin-orbit (SO) coupling in a two-dimensional (2D) surface electron system, in addition to the anticipated Rashba spin splitting. Using angle-resolved photoemission experiments and…