Related papers: Transient Negative Capacitance in Ferroelectric Ne…
Low power consumption is critical for smart windows for temperature control and privacy. The recently discovered ferroelectric nematic liquid crystals exhibit strong coupling of the ferroelectric polarization with electric fields, making…
Conventionally, dc fields are used for switching dipole orientations in ferroelectrics. Such fields tilt the potential surface experienced by domain walls and thereby lower activation energies for their movement: escape from tilted…
Ferroelectric materials are characterized by the presence of an electric dipole that can be reversed by application of an external electric field, a feature that is exploited in ferroelectric memories. All ferroelectrics are piezoelectric,…
We present a model for the leakage current in ferroelectric thin- film capacitors which explains two of the observed phenomena that have escaped satisfactory explanation, i.e. the occurrence of either a plateau or negative differential…
Ferroelectrics under suitable electric boundary conditions can present a negative capacitance response, whereby the total voltage drop across the ferroelectric opposes the externally applied bias. When the ferroelectric is in a…
We construct a comprehensive theory of the electrodynamic response of ferroelectric ultra-thin films containing periodic domain textures (PDT) with 180{\deg} polarization-oriented domains. The focal point of the theory is the…
Spontaneous electric polarization of solid ferroelectrics follows aligning directions of crystallographic axes. Domains of differently oriented polarization are separated by domain walls (DWs), which are predominantly flat and run along…
We consider ferroelectric phase transitions in both short-circuited and biased ferroelectric-semiconductor films with a space (depletion) charge which leads to some unusual behavior. It is shown that in the presence of the charge the…
Heterogeneous nucleation from defects dominates the electric field required for polarization switching of ferroelectrics. Here, we consider the switching of a nominally non-switchable polar thin film of AlN due to the proximity effect…
We have carried out a spectroscopic study on a prototype ferroelectric nematic material (RM7343) doped with a non-polar chiral compound. The mixture presents two chiral nematic phases, one conventional (N*) and the other polar (NF*), whose…
In this paper we propose a modified structure of TFET incorporating ferroelectric oxide as the complementary gate dielectric operating in negative capacitance zone, called the Negative Capacitance Tunnel FET (NCTFET). The proposed device…
Ferroelectric domain structure evolution induced by an external electric field was investigated by means of nematic liquid crystal (NLC) method in two strontium-barium niobate single crystals of nominal composition:…
The elegant simplicity of the device concept and the urgent need for a new "transistor" at the twilight of Moore's law have inspired many researchers in industry and academia to explore the physics and technology of negative capacitance…
The continued evolution of CMOS technology demands materials and architectures that emphasize low power consumption, particularly for computations involving large scale data processing and multivariable optimization. Ferroelectric materials…
Twist-bend (Ntb) and ferroelectric (NF) nematic liquid crystals exhibit several novel effects and new physical properties. The question of what happens in binary mixtures is interesting as a matter of curiosity and pure science. Here, we…
Negative refraction, which reverses many fundamental aspects of classical optics, can be obtained in systems with negative magnetic permeability and negative dielectric permittivity. This Letter documents an experimental realization of…
Atomistic density functional theory (DFT) calculations of the capacitance between a metallic cylindric gate and a carbon nanotube (CNT) are reported. Results stressing the predominant effect of quantum capacitance in limiting or even…
The device of electric double-layer transistor (EDLT) with ionic liquid has been employed as an effective way to dope carriers over a wide range, which can induce metallic state, magnetic reconstruction and superconducting transition.…
Electrical measurements of ferroelectric switching kinetics are widely used to probe the dynamics of polarization reversal, yet the influence of the measurement circuit is often underappreciated. In this paper, we show that the interplay…
While nanoscale electronic logic circuits are well-established, the development of na-noscale thermal logic circuits has been slow, mainly due to the absence of efficient and controllable nonvolatile field-effect thermal transistors. In…