While nanoscale electronic logic circuits are well-established, the development of na-noscale thermal logic circuits has been slow, mainly due to the absence of efficient and controllable nonvolatile field-effect thermal transistors. In this study, we introduce a novel approach that leverages ferroelectric orthorhombic hafnium dioxide (o-HfO2) thin films to achieve electrically switchable nonvolatile field-effect thermal transistors. Using molecular dynamics simulations and machine learning potentials, we demonstrate that a 24 nm o-HfO2 film can exhibit four distinct, reversible states of thermal conductivity. Notably, these states achieve a maximum switching ratio of 171% under 2% tensile strain. Our results underscore the potential of ferroelectric materials, particularly o-HfO2, in advancing thermal logic circuits by enabling multiple, stable thermal conductivity states controlled by electric fields.
@article{arxiv.2503.17954,
title = {High-Efficiency Electrically Switchable Nonvolatile Thermal Transistor with Multiple Thermal Conductivity States Based on Ferroelectric HfO2},
author = {Yong-Kun Huo and Hui-Feng Feng and Chao Yao and Zhong-Xiao Song and Zhi-Xin Guo},
journal= {arXiv preprint arXiv:2503.17954},
year = {2025}
}