Related papers: Active nitrogen flux measurement during GaN growth…
Real-time analysis of the growth modes during homoepitaxial (0001)GaN growth by plasma-assisted molecular beam epitaxy was performed using reflection high energy electron diffraction. A growth mode map was established as a function of Ga/N…
The morphology of GaN samples grown by plasma-assisted molecular beam epitaxy on Si(111) was systematically studied as a function of impinging Ga/N flux ratio and growth temperature (750-850{\deg}C).Two different growth regimes were…
The growth of NiO on GaN(00.1) substrates by plasma-assisted molecular beam epitaxy under oxygen rich conditions was investigated at growth temperatures between 100 $^{\circ}$C and 850 $^{\circ}$C. Epitaxial growth of NiO(111) with two…
Activation analysis is used in this work to measure the flux of a fast neutron beamline at a spallation source over a wide energy spectrum, extending from thermal to hundreds of MeV. The experimental method is based on the irradiation of…
The increasing availability of high-power Yb-based ultrafast laser-amplifier systems has opened the possibility of air filamentation at high repetition rates >1 kHz. In this new regime, accumulation effects cannot be ruled out, therefore,…
NiO layers were grown on MgO(100), MgO(110), and MgO(111) substrates by plasma-assisted molecular beam epitaxy under Ni-flux limited growth conditions. Single crystalline growth with a cube-on-cube epitaxial relationship was confirmed by…
We investigate the influence of modified growth conditions during the spontaneous formation of GaN nanowires on Si(111) in plasma-assisted molecular beam epitaxy. We find that a two-step growth approach, where the substrate temperature is…
We investigate the axial and radial growth of GaN nanowires upon a variation of the Ga flux during molecular beam epitaxial growth. An increase in the Ga flux promotes radial growth without affecting the axial growth rate. In contrast, a…
The present study elucidates the correlation between the structural and optical properties of GaN nanowires grown on Si(111) substrate by plasma assisted molecular beam epitaxy (PA-MBE) technique under various growth conditions. GaN NWs…
Accurate measurements of cosmic ray proton flux are essential for studying the modulation processes of cosmic rays during the solar activity cycle. A proton flux measurement method, based on ground-based neutron monitor (NM) data and deep…
GaMnAs thin films with different Mn doping concentrations were grown via molecular beam epitaxy using a substrate temperature of 250 {\deg}C. The thin films were investigated using photoluminescence (PL) measurements from 8 to 300 K.…
Cubic GaN layers were grown by plasma-assisted molecular beam epitaxy on 3C-SiC (001)substrates. In situ reflection high energy electron diffraction was used to quantitatively determine the Ga coverage of the GaN surface during growth.…
The plasma parameters such as electron distribution function and electron density of three atmospheric-pressure transient discharges namely filamentary and homogeneous dielectric barrier discharges in air, and the spark discharge of argon…
Using molecular beam epitaxy, we demonstrate the growth of (In,Ga)N shells emitting in the green spectral range around very thin (35 nm diameter) GaN core nanowires. These GaN nanowires are obtained by self-assembled growth on TiN. We…
We realize a novel high flux source of cold atoms and molecules employing hydrodynamic enhancement of an effusive aperture at cryogenic temperatures. Molecular oxygen from the source is coupled to a magnetic guide, delivering a cold,…
Indium incorporation and surface morphology of InAlN layers grown on (0001)GaN by plasma-assisted molecular beam epitaxy were investigated as a function of the impinging In flux and the substrate temperature in the 450-610$^{\circ}$C range.…
Positive streamers are thought to propagate by photo-ionization whose parameters depend on the nitrogen:oxygen ratio. Therefore we study streamers in nitrogen with 20%, 0.2% and 0.01% oxygen and in pure nitrogen, as well as in pure oxygen…
We present a preliminary analysis of the photon beam asymmetry observable (Sigma) from the photoproduction reaction channel gamma+ n -> p + pi-. This new data was obtained using the near-4pi CEBAF Large Acceptance Spectrometer (CLAS) at…
500-nm-thick $\mathrm{In}_{x}\mathrm{Ga}_{1-x}\mathrm{N}$ layers with $x=$ 0.05-0.14 are grown using plasma-assisted molecular beam epitaxy, and their properties are assessed by a comprehensive analysis involving x-ray diffraction,…
We fabricate (In,Ga)N pseudo-substrates with a total thickness of ~1 um grown on GaN templates using plasma-assisted molecular beam epitaxy. In a three-step process, we change growth conditions from N-rich to metal-rich in order to…