Related papers: Quantum charge sensing using a semiconductor devic…
Gate tunable junctions are key elements in quantum devices based on hybrid semiconductor-superconductor materials. They serve multiple purposes ranging from tunnel spectroscopy probes to voltage-controlled qubit operations in gatemon and…
We theoretically investigate electronic transport through a junction where a quantum dot (QD) is tunnel coupled on both sides to semiconductor nanowires with strong spin-orbit interaction and proximity-induced superconductivity. The results…
Developing superior quantum sensing strategies ranging from ultra-high precision measurement to complex structural analysis is at the heart of quantum technologies. While strategies using quantum resources, such as entanglement among…
Solid-state devices can be fabricated at the atomic scale, with applications ranging from classical logic to current standards and quantum technologies. While it is very desirable to probe these devices and the quantum states they host at…
Characterizing long-range electric fields and built-in potentials in functional materials at nano- to micrometer scales is of supreme importance for optimizing devices. E.g., the functionality of semiconductor heterostructures or battery…
We study the back-action of a nearby measurement device on electrons undergoing coherent transfer via adiabatic passage (CTAP) in a triple-well system. The measurement is provided by a quantum point contact capacitively coupled to the…
Superconductor-based light-emitting diode (superconductor-based LED) in strong light-confinement regime are characterized as a superconductor-based three-terminal device, and its transport properties are quantitatively investigated. In the…
The sensitivity of superconducting qubits allows for spectroscopy and coherence measurements on individual two-level systems present in the disordered tunnel barrier of an $\mathrm{Al/AlO_x/Al}$ Josephson junction. We report experimental…
Plasmons in heavily doped semiconductor layers are optically active excitations with sharp resonances in the 5-15 um wavelength region set by the doping level and the effective mass. Here we demonstrate that volume plasmons can form in…
Attosecond science has demonstrated that electrons can be controlled on the sub-cycle time scale of an optical wave, paving the way toward optical frequency electronics. Using controlled few-cycle optical waveforms, the study of sub-cycle…
Semiconductor quantum dots provide a two-dimensional analogy for real atoms and show promise for the implementation of scalable quantum computers. Here, we investigate the charge configurations in a silicon metal-oxide-semiconductor double…
We demonstrate a novel method for measuring the discrete energy spectrum of a quantum dot connected very weakly to a single lead. A train of voltage pulses applied to a metal gate induces tunneling of electrons between the quantum dot and a…
The atomically precise placement of dopants in semiconductors using scanning tunneling microscopes has been used to create planar dopant-based devices, enabling the exploration of novel classical or quantum computing concepts, which often…
Recent studies of silicon spin qubits at temperatures above 1 K are encouraging demonstrations that the cooling requirements for solid-state quantum computing can be considerably relaxed. However, qubit readout mechanisms that rely on…
We present a comprehensive electrical characterization of an InAs/InP nanowire heterostructure, comprising two InP barriers forming a quantum dot (QD), two adjacent lead segments (LSs) and two metallic contacts, and demonstrate how to…
The ever-increasing demand for high-capacity rechargeable batteries highlights the need for sensitive and accurate diagnostic technology for determining the state of a cell, for identifying and localizing defects, or for sensing capacity…
We show that a scanning capacitance microscope (SCM) can image buried delta-doped donor nanostructures fabricated in Si via a recently developed atomic-precision scanning tunneling microscopy (STM) lithography technique. A critical…
We report charge sensing measurements of a silicon metal-oxide-semiconductor quantum dot using a single-electron transistor as a charge sensor with dynamic feedback control. Using digitallycontrolled feedback, the sensor exhibits sensitive…
Three-dimensional topological insulators are characterized by the presence of a bandgap in their bulk and gapless Dirac fermions at their surfaces. New physical phenomena originating from the presence of the Dirac fermions are predicted to…
We present QDarts, an efficient simulator for realistic charge stability diagrams of quantum dot array (QDA) devices in equilibrium states. It allows for pinpointing the location of concrete charge states and their transitions in a…