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Opto-electronic computing combines the complementary strengths of photonics and electronics to deliver ultrahigh computational throughput with high energy efficiency. However, its practical deployment for real-world applications has been…
Two-dimensional van der Waals heterostructures are potential game changers both in understanding the fundamental physics and in the realization of various devices that exploit magnetism at the nanoscale. Multiferroic heterostructures…
Flexible electronics and neuromorphic computing face key challenges in material integration and function retention. In particular, freestanding membranes suffer from slow sacrificial layer removal and interfacial strain, while neuromorphic…
We report an improved photosensitivity in few-layer tin disulfide (SnS2) field-effect transistors (FETs) following doping with CdSe/ZnS core/shell quantum dots (QDs). The hybrid QD-SnS2 FET devices achieve more than 500 percent increase in…
This study presents the design, fabrication, and test of a micro accelerometer with intrinsic processing capabilities, that integrates the functions of sensing and computing in the same MEMS. The device consists of an inertial mass…
Two-dimensional (2D) materials are a new class of materials with interesting physical properties and ranging from nanoelectronics to sensing and photonics. In addition to graphene, the most studied 2D material, monolayers of other layered…
The operation of an integrated two-dimensional complementary metal-oxide-semiconductor inverter with well-matched input/output voltages is reported. The circuit combines a few-layer MoS2 n-MOSFET and a black phosphorus (BP) p-MOSFET…
A vertical spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) is a promising low-power device for the post scaling era. Here, using a ferromagnetic-semiconductor GaMnAs-based vertical spin MOSFET with a GaAs channel layer,…
Self-attention in Transformers generates dynamic operands that force conventional Compute-in-Memory (CIM) accelerators into costly non-volatile memory (NVM) reprogramming cycles, degrading throughput and stressing device endurance. Existing…
Memristor-based neuromorphic computing could overcome the limitations of traditional von Neumann computing architectures -- in which data are shuffled between separate memory and processing units -- and improve the performance of deep…
Neuromorphic computing, inspired by the brain's parallel and energy-efficient processing, offers a transformative approach to artificial intelligence. In this study, we fabricated optimized spin-transfer torque nano-oscillators (STNOs) and…
This paper introduces a novel simulation tool for analyzing and training neural network models tailored for compute-in-memory hardware. The tool leverages physics-based device models to enable the design of neural network models and their…
The ability of mechanical systems to perform basic computations has gained traction over recent years, providing an unconventional alternative to digital computing in off grid, low power, and severe environments which render the majority of…
Valley degree of freedom in the 2D semiconductor is a promising platform for the next generation optoelectronics. Electrons in different valleys can have opposite Berry curvature, leading to the valley Hall effect (VHE). However, VHE…
Van der Waals (vdW) p-n heterojunctions are important building blocks for advanced electronics and optoelectronics, in which high-quality heterojunctions essentially determine device performances or functionalities. Creating tunable…
With the growing interest in graphene field-effect transistors (GFETs) for biosensing applications, there is a strong demand for strategies enabling flexible and multiplexed biofunctionalization, as well as highly parallel, real-time…
The classic three-terminal electronic transistors and the emerging two-terminal ion-based memristors are complementary to each other in various nonconventional information processing systems in a heterogeneous integration approach, such as…
In this paper, a two-dimensional analytical model of a laterally graded-channel triple-metal double-gate Junctionless Field Effect Transistor with hetero dielectric gate oxide stack consisting of SiO$_2$ and HfO$_2$ is derived. The model…
As silicon transistors scale toward future technology nodes, three-dimensional architectures -- including gate-all-around (GAA) nanoribbon and complementary field-effect transistors (CFETs) -- require channel widths in the tens of…
Semiconductor research has shifted towards exploring two-dimensional (2D) materials as candidates for next-generation electronic devices due to the limitations of existing silicon technology. Transition Metal Dichalcogenides (TMDCs) stand…