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Spin-polarized charge-currents induce magnetic tunnel junction (MTJ) switching by virtue of spin-transfer-torque (STT). Recently, by taking advantage of the spin dependent thermoelectric properties of magnetic materials, novel means of…
Low barrier nanomagnets have attracted a lot of research interest for their use as sources of high quality true random number generation. More recently, low barrier nanomagnets with tunable output have been shown to be a natural hardware…
Altermagnets with nonrelativistic momentum-dependent spin splitting and compensated net magnetic moments have recently garnered significant interest in spintronics, particularly as pinning layers in magnetic tunnel junctions (MTJs).…
The discovery of spin torque transfer (STT) has lead to a significant advance in the development of spintronic devices. Novel structures and materials have been studied in order to improve the performance of the magnetic tunnel junctions…
To achieve accurate contour tracking of robotic manipulators with dynamic uncertainties, coupling and actuator faults, an adaptive non-singular terminal sliding mode control (ANTSMC) based on cross-coupling is proposed. Firstly, the…
Deep Spiking Neural Networks are becoming increasingly powerful tools for cognitive computing platforms. However, most of the existing literature on such computing models are developed with limited insights on the underlying hardware…
Planar Josephson junctions (JJs), based on common superconductors and III-V semiconductors, are sought for Majorana states and fault-tolerant quantum computing. However, with gate-tunable spin-orbit coupling (SOC), we show that the range of…
There exists a significant challenge in developing efficient magnetic tunnel junctions with low write currents for non-volatile memory devices. With the aim of analysing potential materials for efficient current-operated magnetic junctions…
Atomically precise donor-based quantum devices are a promising candidate for scalable solid-state quantum computing. Atomically precise design and implementation of the tunnel coupling in these devices is essential to realize gate-tunable…
Voltage control of ferromagnetism on the nanometer scale is highly appealing for the development of novel electronic devices. Here a key challenge is to implement and combine low power consumption, high operation speed, reliable…
The vast amount of data generated by camera sensors has prompted the exploration of energy-efficient processing solutions for deploying computer vision tasks on edge devices. Among the various approaches studied, processing-in-pixel…
Probabilistic Ising machines (PIMs) provide a path to solving many computationally hard problems more efficiently than deterministic algorithms on von Neumann computers. Stochastic magnetic tunnel junctions (S-MTJs), which are engineered to…
We propose and computationally analyze a nonvolatile static random access memory (NV-SRAM) cell using magnetic tunnel junctions (MTJs) with magnetic-field-free current-induced magnetization switching (CIMS) architecture. A pair of MTJs…
We present a design-scheme for ultra-low power neuromorphic hardware using emerging spin-devices. We propose device models for 'neuron', based on lateral spin valves and domain wall magnets that can operate at ultra-low terminal voltage of…
We theoretically propose and analyze a Josephson-like magnetic tunnel junction (MTJ) structure that exhibits quantum spin dynamics analogous to those in superconducting Josephson junctions. By exploiting the isomorphism between the…
Magnetic tunnel junctions are nanoscale devices which have recently attracted interested in the context of frequency multiplexed spintronic neural networks, due to their interesting dynamical properties, which are defined during the…
We demonstrate single shot al optical switching (AOS) in rare earth free CoFeB/MgO magnetic tunnel junctions (MTJs), a material system widely adopted in spin transfer torque magnetic random access memory (STT MRAM). By tuning the capping…
The realistic modeling of STT-MRAM for the simulations of hybrid CMOS/Spintronics devices in comprehensive simulation environments require a full description of stochastic switching processes in state of the art STT-MRAM. Here, we derive an…
Strain-mediated voltage control of magnetization in piezoelectric/ferromagnetic systems is a promising mechanism to implement energy-efficient spintronic memory devices. Here, we demonstrate giant voltage manipulation of MgO magnetic tunnel…
In the past few years the phenomenon of spin dependent tunneling (SDT) in magnetic tunnel junctions (MTJs) has aroused enormous interest and has developed into a vigorous field of research. The large tunneling magnetoresistance (TMR)…