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A new class of spin-transfer torque magnetic random access memory (STT-MRAM) is discussed, in which writing is achieved using thermally initiated magnonic current pulses as an alternative to conventional electric current pulses. The…
We consider Anderson transitions in two-dimensional spinful electron gases subject to random scalar potentials with time-reversal-symmetric spin-mixing tunneling (SMT) and spin-preserving tunneling (SPT) at potential saddle points (PSPs). A…
Integrating conventional superconductors with common III-V semiconductors provides a versatile platform to implement tunable Josephson junctions (JJs) and their applications. We propose that with gate-controlled time-dependent spin-orbit…
We report an experimental study on the tuning of supercurrent in a ballistic graphene-based Josephson junction by applying a control voltage to a transverse normal channel. In this four-terminal geometry, the control voltage changes the…
CMOS-compatible HfO2-based ferroelectric tunnel junction (FTJ) has attracted significant attention as a promising candidate for in-memory computing (IMC) due to its extremely low power consumption. However, conventional FTJs face inherent…
Ferromagnetic spin-valves and tunneling junctions are crucial for spintronics applications and are one of the most fundamental spintronics devices. Motivated by the potential unique advantages of antiferromagnets for spintronics, we…
We report the possibility of achieving an order of magnitude reduction in the energy dissipation needed to write bits in perpendicular magnetic tunnel junctions (p-MTJs) by simulating the magnetization dynamics under a combination of…
We characterize the nanosecond pulse switching performance of the three-terminal magnetic tunnel junctions (MTJs), driven by the spin Hall effect (SHE) in the channel, at a cryogenic temperature of 3 K. The SHE-MTJ devices exhibit…
Switched-capacitor (SC) DC-DC voltage converters are widely used in power delivery and management of modern integrated circuits. Connected to a common supply voltage, SC converters exhibit cross-regulation/coupling effects among loads…
We have fabricated nanoscale magnetic tunnel junctions (MTJs) with an additional fixed magnetic layer added above the magnetic free layer of a standard MTJ structure. This acts as a second source of spin-polarized electrons that, depending…
Magnetic molecules possess a high potential as building blocks for the design of spintronic devices. Moreover, the use of molecular materials opens the way for the controlled use of bottom-up, e.g. supramolecular, processing techniques…
Stochastic computing (SC) is an emerging computing technique that promises high density, low power, and error tolerant solutions. In SC, values are encoded as unary bitstreams and SC arithmetic circuits operate on one or more bitstreams. In…
Magnetic tunnel junctions (MTJs), which are the fundamental building blocks of spintronic devices, have been used to build true random number generators (TRNGs) with different trade-offs between throughput, power, and area requirements.…
Molecular spintronics is made possible by the coupling between electronic configuration and magnetic po- larization of the molecules. For control and application of the individual molecular states it is necessary to both read and write…
Multiferroic tunnel junctions (MFTJs) have already been proved to be promising candidates for application in spintronics devices. The coupling between tunnel magnetoresistance (TMR) and tunnel electroresistance (TER) in MFTJs can provide…
We introduce a method for a combined calculation of charge and vector spin transport of elastically tunneling electrons in magnetic scanning tunneling microscopy (STM). The method is based on the three-dimensional Wentzel-Kramers-Brillouin…
Spin transfer torque magnetic random access memory (STT-MRAM) is a promising candidate for next generation memory as it is non-volatile, fast, and has unlimited endurance. Another important aspect of STT-MRAM is that its core component, the…
Spin-transfer magnetic random access memory is of significant interest for cryogenic applications where a persistent, fast, low-energy consumption and high device density is needed. Here we report the low-temperature nanosecond duration…
Enabling scalable and energy-efficient control of spin defects in solid-state media is desirable for realizing transformative quantum information technologies. Exploiting voltage-controlled magnetic anisotropy, we report coherent…
An Artificial Neural Network (ANN) inference involves matrix vector multiplications that require a very large number of multiply and accumulate operations, resulting in high energy cost and large device footprint. Stochastic computing (SC)…