Related papers: Strain-engineering spin-valley locking effect in a…
Altermagnetism, as a new category of collinear magnetism distinct from traditional ferromagnetism and antiferromagnetism, exhibits the spin splitting without net magnetization. Currently, researchers are focus on searching three-dimensional…
The interplay between topology and valley degree of freedom has attracted much interest because it can realize new phenomena and applications. Here, based on first-principles calculations, we demonstrate intrinsically valley-polarized…
The non-relativistic spin-momentum locking in altermagnets gives rise to a time-reversal-odd spin Hall effect, known as the altermagnetic spin-splitting effect (ASSE). Although ASSE was first reported in RuO$_2$, subsequent experiments have…
Strain is an effective method to tune the electronic properties of two-dimension (2D) materials, and can induce novel phase transition. Recently, 2D $\mathrm{MA_2Z_4}$ family materials are of interest because of their emerging topological,…
The electronic transport characteristics of two-dimensional (2D) systems have widespread application prospects in the fabrication of multifunctional nanodevices. However, the current research for basic transport phenomena, such as anomalous…
The discovery of collinear symmetric-compensated altermagnets (AM) with intrinsic spin splitting provides a route towards energy-efficient and ultrafast device applications. Here, using first-principles calculations and symmetry analysis,…
As an emerging magnetic phase, altermagnets with compensated magnetic order and non-relativistic spin-splitting have attracted widespread attention. Currently, strain engineering is considered to be an effective method for inducing valley…
Altermagnets (AMs) are a recently identified class of unconventional collinear compensated antiferromagnets that exhibit momentum-dependent spin splitting despite having zero net magnetization. This unconventional magnetic order gives rise…
Based on first-principles calculations, we predict that the monolayer AuTe2Cl is a quantum spin Hall (QSH) insulator with a topological band gap about 10 meV. The three-dimensional (3D) AuTe2Cl is a topological semimetal that can be viewed…
Two-dimensional Chern insulators have emerged as crucial platforms for the realization of the quantum anomalous Hall effect, and as such have attracted significant interest in spintronics and topological quantum physics due to their unique…
We establish a unified, symmetry-driven framework that combines the alternating spin splitting of altermagnets with valley topology to realize and electrically interconvert helical and chiral topological phases within a single material…
Altermagnetic (AM) order, a recently discovered magnetic state, has attracted intense research interest for its potential applications in spintronic and quantum technologies. Here, we theoretically investigate the AM state in the Lieb…
Altermagnets (AMs) and fully compensated ferrimagnets (FC-FIMs) are emerging classes of magnetic materials that combine the advantages of antiferromagnets and ferromagnets. Here, we elucidate the mechanism behind the uniaxial strain-driven…
Two-dimensional transition metal dichalcogenides have attracted great attention recently. Motivated by a recent study of crystalline bulk VTe$_2$, we theoretically investigated the spin-charge-lattice interplay in monolayer VTe$_2$. To…
Proximity effects not only complement the conventional methods of designing materials, but also enable realizing properties that are not present in any constituent region of the considered heterostructure. Here we reveal an unexplored…
Conventional topological classification theory dictates that time-reversal symmetry confines the quantum spin Hall (QSH) effect to a $\mathbb{Z}_2$ classification, permitting only a single pair of gapless helical edge states. Here, we…
The ability to control and manipulate time-reversal ($T$) symmetry-breaking phases with near-zero net magnetization is a sought-after goal in spintronic devices. The recently discovered hexagonal altermagnet manganese telluride…
Ferrovalley materials can achieve manipulation of the valley degree of freedom with intrinsic spontaneous valley polarization introduced by their intrinsic ferromagnetism. A good ferrovalley material should possess perpendicular magnetic…
Recent studies reveal that $\mathcal{T}$-odd spin currents generated via the nonrelativistic altermagnetic spin splitting effect (ASSE) exhibit significant potential for spintronics applications, with both computational and experimental…
Valleytronics is a rapidly advancing field that explores the use of the valley degree of freedom in electronic systems to encode and process information. It relies on electronic states with spin valley locking, first predicted and observed…